Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD50N10-8M9L_GE3 SQD50N10-8M9L_GE3

Description
Manufacturer: Vishay Win Source Part Number: 1101733-SQD50N10-8M9 L_GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 2950pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.9 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1101733-SQD50N10-8M9 L_GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 2950pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.9 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD50N10-8M9L_GE3 - 1101733-SQD50N10-8M9L_GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD50N10-8M9L_GE3
1101733-SQD50N10-8M9L_GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD50N10-8M9L_GE3 1101733-SQD50N10-8M9L_GE3
Manufacturer: Vishay Win Source Part Number: 1101733-SQD50N10-8M9 L_GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 2950pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.9 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1101733-SQD50N10-8M9L_GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2950pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.9 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SQD50N10-8M9L_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQD50N10-8M9L_GE3CT-ND
Single FETs, MOSFETs SQD50N10-8M9L_GE3CT-ND
N-Channel 100V 50A (Tc) 136W (Tc) Surface Mount TO-252AA

N-Channel 100V 50A (Tc) 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SQD50N10-8M9L_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQD50N10-8M9L_GE3DKR-ND
Single FETs, MOSFETs SQD50N10-8M9L_GE3DKR-ND
N-Channel 100V 50A (Tc) 136W (Tc) Surface Mount TO-252AA

N-Channel 100V 50A (Tc) 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SQD50N10-8M9L_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQD50N10-8M9L_GE3TR-ND
Single FETs, MOSFETs SQD50N10-8M9L_GE3TR-ND
N-Channel 100V 50A (Tc) 136W (Tc) Surface Mount TO-252AA

N-Channel 100V 50A (Tc) 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SQD50N10-8M9L_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQD50N10-8M9L_GE3
Single FETs, MOSFETs SQD50N10-8M9L_GE3
MOSFET N-CH 100V 50A TO252AA

MOSFET N-CH 100V 50A TO252AA

Supplier's Site Datasheet
Singapore
Automotive 100V 50A MOSFET Transistor
278-SQD50N10-8M9L_GE3
Automotive 100V 50A MOSFET Transistor 278-SQD50N10-8M9L_GE3
Trans MOSFET N-CH 100V 50A Automotive AEC-Q101 3-Pin(2+Tab) TO-252AA Product overview: SQD50N10-8M9L_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 100V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 100V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD50N10-8M9L_GE 3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 100V 50A Automotive AEC-Q101 3-Pin(2+Tab) TO-252AA Product overview: SQD50N10-8M9L_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 100V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 100V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD50N10-8M9L_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQD50N10-8M9L_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQD50N10-8M9L_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQD50N10-8M9L_GE3
MOSFET N-CH 100V 50A TO252AA

MOSFET N-CH 100V 50A TO252AA

Supplier's Site
Mosfet, N-Ch, 100V, 50A, 175Deg C, 136W Rohs Compliant Vishay - 75AH9209 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 50A, 175Deg C, 136W Rohs Compliant Vishay
75AH9209
Mosfet, N-Ch, 100V, 50A, 175Deg C, 136W Rohs Compliant Vishay 75AH9209
MOSFET, N-CH, 100V, 50A, 175DEG C, 136W ROHS COMPLIANT: YES

MOSFET, N-CH, 100V, 50A, 175DEG C, 136W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1101733-SQD50N10-8M9L_GE3 SQD50N10-8M9L_GE3CT-ND SQD50N10-8M9L_GE3 278-SQD50N10-8M9L_GE3 SQD50N10-8M9L_GE3 75AH9209
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD50N10-8M9L_GE3 Single FETs, MOSFETs Single FETs, MOSFETs Automotive 100V 50A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 100V, 50A, 175Deg C, 136W Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts 100 volts
PD 136000 milliwatts 136000 milliwatts 136 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 C (-67 F)
Package Type SOT3; TO-252 (DPAK); TO-252 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 Reel TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
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