MOSFET N-CH 60V 50A TO252
Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SQD50N06-09L_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 50A, 60V, 0.009ohm, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50A, 60V, 0.009ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD50N06-09L_GE3
N-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-252AA
N-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-252AA
N-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-252AA
MOSFET 60V 50A 136W AEC-Q101 Qualified
MOSFET N-CH 60V 50A TO252
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SQD50N06-09L_GE3 | 278-SQD50N06-09L_GE3 | SQD50N06-09L_GE3TR-ND | SQD50N06-09L_GE3 | SQD50N06-09L_GE3 |
| Product Name | Single FETs, MOSFETs | N-Channel 50A 60V 0.009ohm MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 60 volts | ||||
| IDSS | 50000 milliamps | ||||
| PD | 136000 milliwatts |
