Vishay Precision Group MOSFETs SQD40N06-14L_GE3

MOSFET N-Ch 60V 40A Auto 175C TO252AA

MOSFET N-Ch 60V 40A Auto 175C TO252AA

Power Field-Effect Transistor, 40A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SQD40N06-14L_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40A, 60V, 0.014ohm, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40A, 60V, 0.014ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD40N06-14L_GE3 can be used for catalog matching and distributor lookup.

N-Channel 60V 40A (Tc) 75W (Tc) Surface Mount TO-252AA

N-Channel 60V 40A (Tc) 75W (Tc) Surface Mount TO-252AA

N-Channel 60V 40A (Tc) 75W (Tc) Surface Mount TO-252AA

Manufacturer: Vishay
Win Source Part Number: 1101725-SQD40N06-14L_GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 2105pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited