MOSFET P-CH 40V 50A TO252AA
P-Channel 40V 50A (Tc) 62W (Tc) Surface Mount TO-252AA
P-Channel 40V 50A (Tc) 62W (Tc) Surface Mount TO-252AA
P-Channel 40V 50A (Tc) 62W (Tc) Surface Mount TO-252AA
Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK Product overview: SQD40131EL_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 40V, 50A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 40V, 50A, DPAK, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD40131EL_GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 897222-SQD40131EL_GE
Series: Automotive, AEC-Q101, TrenchFET®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: P-Channel 40 V 50A (Tc) 62W (Tc) Surface Mount TO-252AA
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: Reel - TR
Mounting: Surface Mount
Family Name: SQD40131
Categories: Discrete Semiconductor Products
Case / Package: TO-252AA
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 86 pct.
Supply and Demand Status: Balance
Quantity per package: 2000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQD40131EL_GE3CT, SQD40131EL_GE3TR, SQD40131EL_GE3DKR
MOSFET, P-CH, AEC-Q101, -40V, -50A; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0095ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power RoHS Compliant: Yes
MOSFET P-CH 40V 50A TO252AA
MOSFET -40V Vds -/+20V Vgs AEC-Q101 Qualified
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQD40131EL_GE3 | SQD40131EL_GE3TR-ND | 278-SQD40131EL_GE3 | 897222-SQD40131EL_GE3 | 47AC9703 | SQD40131EL_GE3 | SQD40131EL_GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Automotive 40V 50A DPAK MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD40131EL_GE3 | Mosfet, P-Ch, Aec-Q101, -40V, -50A; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| IDSS | 50000 milliamps | -50000 milliamps | |||||
| PD | 62000 milliwatts | 62000 milliwatts |
