Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK Product overview: SQD40081EL_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 40V, 50A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 40V, 50A, DPAK, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD40081EL_GE3 can be used for catalog matching and distributor lookup.
P-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-252AA
P-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-252AA
P-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-252AA
Win Source Part Number: 970295-SQD40081EL_GE
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQD40081EL_GE3TR,SQD
Base Product Number: SQD40081
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET P-CH 40V 50A TO252AA
MOSFET P-CH 40V 50A TO252AA
MOSFET, P-CH, -40V, -50A, 175DEG C, 71W; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQD40081EL_GE3 | SQD40081EL_GE3CT-ND | 970295-SQD40081EL_GE3 | SQD40081EL_GE3 | SQD40081EL_GE3 | 81AC2813 |
| Product Name | Automotive 40V 50A DPAK MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, -40V, -50A, 175Deg C, 71W; Transistor Polarity Vishay |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 40 volts | 40 volts | ||||
| PD | 71000 milliwatts | 71000 milliwatts | 71000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel |
