P-Channel 40V 100A (Tc) 107W (Tc) Surface Mount TO-252AA
P-Channel 40V 100A (Tc) 107W (Tc) Surface Mount TO-252AA
P-Channel 40V 100A (Tc) 107W (Tc) Surface Mount TO-252AA
Win Source Part Number: 993595-SQD40061EL_GE
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQD40061EL_GE3TR,SQD
Base Product Number: SQD40061
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET P-CH 40V 100A TO252AA
Automotive P-Channel 40 V (D-S) 175C MOS
Automotive P-Channel 40 V (D-S) 175C MOS
Automotive P-Channel 40 V (D-S) 175C MOS
MOSFET P-CH 40V 100A TO252AA
MOSFET -40V Vds 20V Vgs DPAK (TO-252)
MOSFET, P-CH, -40V, -100A, 175DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-100A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0042ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQD40061EL_GE3TR-ND | 993595-SQD40061EL_GE3 | SQD40061EL_GE3 | 1783960P | 1783716 | SQD40061EL_GE3 | SQD40061EL_GE3 | 81AC2812 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -40V, -100A, 175Deg C; Transistor Polarity Vishay |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252 | TO-252 (DPAK); To-252 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | |
| Transistor Grade / Operating Range | Automotive | |||||||
| PD | 107000 milliwatts | 107000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
