Win Source Part Number: 970294-SQD40031EL_GE
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQD40031EL_GE3CT,SQD
Base Product Number: SQD40031
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Automotive P-Channel 30 V (D-S) 175C MOS
Automotive P-Channel 30 V (D-S) 175C MOS
Automotive P-Channel 30 V (D-S) 175C MOS
P-Channel 30V 100A (Tc) 136W (Tc) Surface Mount TO-252AA
P-Channel 30V 100A (Tc) 136W (Tc) Surface Mount TO-252AA
P-Channel 30V 100A (Tc) 136W (Tc) Surface Mount TO-252AA
MOSFET, P-CH, -30V, -100A, 175DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-100A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.00263ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power RoHS Compliant: Yes
MOSFET P-CH 30V 100A TO252AA
MOSFET -30V Vds 20V Vgs DPAK (TO-252)
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 970294-SQD40031EL_GE3 | 1783950 | 1783950P | SQD40031EL_GE3DKR-ND | 81AC2811 | SQD40031EL_GE3 | SQD40031EL_GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, -30V, -100A, 175Deg C; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | |||
| PD | 136000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | SOT3; TO-252 (DPAK) | TO-252 (DPAK); To-252 | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| MOSFET Operating Mode | Enhancement |
