N-Channel 55V 30A (Tc) 50W (Tc) Surface Mount TO-252AA
N-Channel 55V 30A (Tc) 50W (Tc) Surface Mount TO-252AA
N-Channel 55V 30A (Tc) 50W (Tc) Surface Mount TO-252AA
Power Field-Effect Transistor, 30A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SQD30N05-20L_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30A, 55V, 0.02ohm, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30A, 55V, 0.02ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD30N05-20L_GE3
Manufacturer: Vishay
Win Source Part Number: 1101724-SQD30N05-20L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 18nC @ 5V
Max Input Capacitance: 1175pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 55V 30A TO252AA
MOSFET N-Channel 55V AEC-Q101 Qualified
VISHAY SQD30N05-20L -GE3 MOSFET Transistor, N Channel, 30 A, 55 V, 0.016 ohm, 10 V, 2 V
MOSFET Transistor, N Channel, 30 A, 55 V, 0.016 ohm, 10 V, 2 V RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQD30N05-20L_GE3TR-ND | 278-SQD30N05-20L_GE3 | 1101724-SQD30N05-20L_GE3 | SQD30N05-20L_GE3 | SQD30N05-20L_GE3 | 880-SQD30N05-20L_GE3 | 37T8236 |
| Product Name | Single FETs, MOSFETs | N-Channel 30A 55V 0.02ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD30N05-20L_GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | VISHAY SQD30N05-20L -GE3 MOSFET Transistor, N Channel, 30 A, 55 V, 0.016 ohm, 10 V, 2 V | Mosfet Transistor, N Channel, 30 A, 55 V, 0.016 Ohm, 10 V, 2 V Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); TO-252AA | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | |||
| Transistor Grade / Operating Range | Automotive | ||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| V(BR)DSS | 55 volts |
