P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252AA
P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252AA
P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252AA
Power Field-Effect Transistor, 20A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3/2 Product overview: SQD19P06-60L_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20A, 60V, 0.055ohm, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20A, 60V, 0.055ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD19P06-60L_GE3
Manufacturer: Vishay
Win Source Part Number: 1101721-SQD19P06-60L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 1490pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 55 mOhm @ 19A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
MOSFET P-CH 60V 20A TO252
MOSFET 60V 20A 46W AEC-Q101 Qualified
MOSFET, P-CH, 60V, 20A, 175DEG C, 46W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:20A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:46W; No. of Pins:3Pins RoHS Compliant: Yes
MOSFET P-CH 60V 20A TO252
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQD19P06-60L_GE3TR-ND | 278-SQD19P06-60L_GE3 | 8193936P | 8193936 | 1101721-SQD19P06-60L_GE3 | SQD19P06-60L_GE3 | SQD19P06-60L_GE3 | 61AC2033 | SQD19P06-60L_GE3 | 866-SQD19P06-60L_GE3 |
| Product Name | Single FETs, MOSFETs | P-Channel 20A 60V 0.055ohm MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD19P06-60L_GE3 | Single FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 60V, 20A, 175Deg C, 46W; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Automotive P-Channel 60 V (D-S) 175 °C MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | |||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252 | TO-252 (DPAK); Dpak (to-252) | SOT3; TO-252 (DPAK); TO-252, (D-Pak) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |||
| Transistor Grade / Operating Range | Automotive | |||||||||
| MOSFET Operating Mode | Enhancement | |||||||||
| Number of units in IC | 1 |
