Vishay Precision Group MOSFETs SQD19P06-60L_GE3

Description
Trans MOSFET P-CH 60V 20A
Request a Quote Datasheet
Description
Trans MOSFET P-CH 60V 20A
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 8193936P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8193936P
MOSFETs 8193936P
Trans MOSFET P-CH 60V 20A

Trans MOSFET P-CH 60V 20A

Supplier's Site
MOSFETs - 8193936 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8193936
MOSFETs 8193936
Trans MOSFET P-CH 60V 20A

Trans MOSFET P-CH 60V 20A

Supplier's Site
MOSFETs - 1452756 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1452756
MOSFETs 1452756
Trans MOSFET P-CH 60V 20A

Trans MOSFET P-CH 60V 20A

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD19P06-60L_GE3 - 1101721-SQD19P06-60L_GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD19P06-60L_GE3
1101721-SQD19P06-60L_GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD19P06-60L_GE3 1101721-SQD19P06-60L_GE3
Manufacturer: Vishay Win Source Part Number: 1101721-SQD19P06-60L _GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 46W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 41nC @ 10V Max Input Capacitance: 1490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 55 mOhm @ 19A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1101721-SQD19P06-60L_GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 1490pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 55 mOhm @ 19A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SQD19P06-60L_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQD19P06-60L_GE3TR-ND
Single FETs, MOSFETs SQD19P06-60L_GE3TR-ND
P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252AA

P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SQD19P06-60L_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQD19P06-60L_GE3CT-ND
Single FETs, MOSFETs SQD19P06-60L_GE3CT-ND
P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252AA

P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SQD19P06-60L_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQD19P06-60L_GE3DKR-ND
Single FETs, MOSFETs SQD19P06-60L_GE3DKR-ND
P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252AA

P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Singapore, Singapore
P-Channel 20A 60V 0.055ohm MOSFET Transistor
278-SQD19P06-60L_GE3
P-Channel 20A 60V 0.055ohm MOSFET Transistor 278-SQD19P06-60L_GE3
Power Field-Effect Transistor, 20A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3/2 Product overview: SQD19P06-60L_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20A, 60V, 0.055ohm, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20A, 60V, 0.055ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD19P06-60L_GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 20A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3/2 Product overview: SQD19P06-60L_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20A, 60V, 0.055ohm, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20A, 60V, 0.055ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD19P06-60L_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SQD19P06-60L_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQD19P06-60L_GE3
Single FETs, MOSFETs SQD19P06-60L_GE3
MOSFET P-CH 60V 20A TO252

MOSFET P-CH 60V 20A TO252

Supplier's Site Datasheet
MOSFET 60V 20A 46W AEC-Q101 Qualified

MOSFET 60V 20A 46W AEC-Q101 Qualified

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQD19P06-60L_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQD19P06-60L_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQD19P06-60L_GE3
MOSFET P-CH 60V 20A TO252

MOSFET P-CH 60V 20A TO252

Supplier's Site
Mosfet, P-Ch, 60V, 20A, 175Deg C, 46W; Channel Type Vishay - 61AC2033 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 60V, 20A, 175Deg C, 46W; Channel Type Vishay
61AC2033
Mosfet, P-Ch, 60V, 20A, 175Deg C, 46W; Channel Type Vishay 61AC2033
MOSFET, P-CH, 60V, 20A, 175DEG C, 46W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:20A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:46W; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, P-CH, 60V, 20A, 175DEG C, 46W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:20A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:46W; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site Datasheet
Automotive P-Channel 60 V (D-S) 175 °C MOSFET - 866-SQD19P06-60L_GE3 - Utmel Electronic Limited
Hong Kong, China
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
866-SQD19P06-60L_GE3
Automotive P-Channel 60 V (D-S) 175 °C MOSFET 866-SQD19P06-60L_GE3
Automotive P-Channel 60 V (D-S) 175 °C MOSFET

Automotive P-Channel 60 V (D-S) 175 °C MOSFET

Supplier's Site

Technical Specifications

  RS Components, Ltd. RS Components, Ltd. Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 8193936P 8193936 1101721-SQD19P06-60L_GE3 SQD19P06-60L_GE3TR-ND 278-SQD19P06-60L_GE3 SQD19P06-60L_GE3 SQD19P06-60L_GE3 SQD19P06-60L_GE3 61AC2033 866-SQD19P06-60L_GE3
Product Name MOSFETs MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD19P06-60L_GE3 Single FETs, MOSFETs P-Channel 20A 60V 0.055ohm MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, 60V, 20A, 175Deg C, 46W; Channel Type Vishay Automotive P-Channel 60 V (D-S) 175 °C MOSFET
Package Type TO-252 (DPAK); TO-252 TO-252 (DPAK); Dpak (to-252) SOT3; TO-252 (DPAK); TO-252, (D-Pak) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
MOSFET Operating Mode Enhancement
Number of units in IC 1
V(BR)DSS 60 volts 60 volts
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