Trans MOSFET N-CH 250V 11.5A 3-Pin(2+Tab) DPAK Automotive AEC-Q101 Product overview: SQD10950E_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 250V, 11.5A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 250V, 11.5A, DPAK, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD10950E_GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1277831-SQD10950E_GE
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 162mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 62W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: SQD10950E_GE3,742-SQ
Base Product Number: SQD10950
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
N-Channel 250V 11.5A (Tc) 62W (Tc) Surface Mount TO-252AA
N-Channel 250V 11.5A (Tc) 62W (Tc) Surface Mount TO-252AA
N-Channel 250V 11.5A (Tc) 62W (Tc) Surface Mount TO-252AA
MOSFET N-CH 250V 11.5A TO252AA
MOSFET Automotive N-Channel 250 V (D-S) 175C MOSFET
MOSFET, N-CHANNEL 250 V DPAK TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.1342ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Acme Chip Technology Co., Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQD10950E_GE3 | 1277831-SQD10950E_GE3 | 742-SQD10950E_GE3DKR-ND | SQD10950E_GE3 | SQD10950E_GE3 | 34AH2725 |
| Product Name | Automotive 250V 11.5A DPAK MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Channel 250 V Dpak To-252; Transistor Polarity Vishay |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 250 volts | |||||
| PD | 62000 milliwatts | |||||
| TJ | -55 C (-67 F) | |||||
| Polarity | N-Channel | N-Channel | N-Channel |
