Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SQD10950E_GE3

Description
Win Source Part Number: 1277831-SQD10950E_GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 162mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 62W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) Mfr: Vishay Siliconix Other Names: SQD10950E_GE3,742-SQ D10950E_GE3DKR,742-S QD10950E_GE3CT,742-S QD10950E_GE3TR Base Product Number: SQD10950 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
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Description
Win Source Part Number: 1277831-SQD10950E_GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 162mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 62W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) Mfr: Vishay Siliconix Other Names: SQD10950E_GE3,742-SQ D10950E_GE3DKR,742-S QD10950E_GE3CT,742-S QD10950E_GE3TR Base Product Number: SQD10950 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
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Suppliers

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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277831-SQD10950E_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277831-SQD10950E_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277831-SQD10950E_GE3
Win Source Part Number: 1277831-SQD10950E_GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 162mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 62W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) Mfr: Vishay Siliconix Other Names: SQD10950E_GE3,742-SQ D10950E_GE3DKR,742-S QD10950E_GE3CT,742-S QD10950E_GE3TR Base Product Number: SQD10950 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Win Source Part Number: 1277831-SQD10950E_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 162mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 62W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: SQD10950E_GE3,742-SQD10950E_GE3DKR,742-SQD10950E_GE3CT,742-SQD10950E_GE3TR
Base Product Number: SQD10950
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - 742-SQD10950E_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SQD10950E_GE3TR-ND
Single FETs, MOSFETs 742-SQD10950E_GE3TR-ND
N-Channel 250V 11.5A (Tc) 62W (Tc) Surface Mount TO-252AA

N-Channel 250V 11.5A (Tc) 62W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - 742-SQD10950E_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SQD10950E_GE3DKR-ND
Single FETs, MOSFETs 742-SQD10950E_GE3DKR-ND
N-Channel 250V 11.5A (Tc) 62W (Tc) Surface Mount TO-252AA

N-Channel 250V 11.5A (Tc) 62W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - 742-SQD10950E_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SQD10950E_GE3CT-ND
Single FETs, MOSFETs 742-SQD10950E_GE3CT-ND
N-Channel 250V 11.5A (Tc) 62W (Tc) Surface Mount TO-252AA

N-Channel 250V 11.5A (Tc) 62W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQD10950E_GE3 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQD10950E_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQD10950E_GE3
MOSFET N-CH 250V 11.5A TO252AA

MOSFET N-CH 250V 11.5A TO252AA

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Automotive N-Channel 250 V (D-S) 175C MOSFET

MOSFET Automotive N-Channel 250 V (D-S) 175C MOSFET

Buy Now Datasheet
Mosfet, N-Channel 250 V Dpak To-252; Transistor Polarity Vishay - 34AH2725 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Channel 250 V Dpak To-252; Transistor Polarity Vishay
34AH2725
Mosfet, N-Channel 250 V Dpak To-252; Transistor Polarity Vishay 34AH2725
MOSFET, N-CHANNEL 250 V DPAK TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.1342ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CHANNEL 250 V DPAK TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.1342ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277831-SQD10950E_GE3 742-SQD10950E_GE3TR-ND SQD10950E_GE3 SQD10950E_GE3 34AH2725
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Channel 250 V Dpak To-252; Transistor Polarity Vishay
Polarity N-Channel N-Channel N-Channel
Package Type SOT3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3; TO-252 (DPAK)
Transistor Grade / Operating Range Automotive
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