Vishay Intertechnology, Inc. MOSFET SQD100N04-3m6_GE3

The SQD100N04-3m6_GE3 is an automotive-grade N-channel MOSFET with a 40 V drain-source voltage rating and a TO-252 package, designed for high-current switching applications. It features a maximum continuous drain current of 100 A at 25 °C and a typical on-state resistance of 0.0036 Ω at 10 V gate-source voltage. The device is AEC-Q101 qualified, operates with a junction temperature range of -55 °C to +175 °C, and has a junction-to-case thermal resistance of 1.1 °C/W. The package is lead-free and halogen-free, with drain connected to the tab. Its single pulse avalanche energy is rated at 192 mJ, and it is tested for 100 % R DS(on) and UIS compliance.