Vishay Intertechnology, Inc. N-Channel 30V 100A 136W MOSFET Transistor SQD100N03-3M4_GE3

MOSFETs 30V 100A 136W N-Channel MOSFET Product overview: SQD100N03-3M4_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 100A, 136W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, 136W, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQD100N03-3M4_GE3 can be used for catalog matching and distributor lookup.

N-Channel 30V 100A (Tc) 136W (Tc) Surface Mount TO-252AA

Win Source Part Number: 970293-SQD100N03-3M4_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7349 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQD100N03-3M4_GE3-ND,SQD100N03-3M4_GE3TR,SQD100N03-3M4_GE3CT,SQD100N03-3M4_GE3DKR
Base Product Number: SQD100
Drive Voltage (Max Rds On, Min Rds On): 10V