Vishay Intertechnology, Inc. Transistor SQ9945BEY-T1-GE3

Description
(PRICE/TC) MOSFET, NN CHANNEL, W/D, 60V, 6A, SO8; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:5.4A; DRAIN SOURCE VOLTAGE VDS:60V; ON RE. FREE 2 YEAR RADWELL WARRANTY
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Description
(PRICE/TC) MOSFET, NN CHANNEL, W/D, 60V, 6A, SO8; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:5.4A; DRAIN SOURCE VOLTAGE VDS:60V; ON RE. FREE 2 YEAR RADWELL WARRANTY
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Suppliers

Company
Product
Description
Supplier Links
Transistor - 39148558 - Radwell International
Willingboro, NJ, United States
Transistor
39148558
Transistor 39148558
(PRICE/TC) MOSFET, NN CHANNEL, W/D, 60V, 6A, SO8; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:5.4A; DRAIN SOURCE VOLTAGE VDS:60V; ON RE. FREE 2 YEAR RADWELL WARRANTY

(PRICE/TC) MOSFET, NN CHANNEL, W/D, 60V, 6A, SO8; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:5.4A; DRAIN SOURCE VOLTAGE VDS:60V; ON RE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - 212081-SQ9945BEY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
212081-SQ9945BEY-T1-GE3
Discrete Semiconductor Products 212081-SQ9945BEY-T1-GE3
Manufacturer: Vishay-Siliconix Win Source Part Number: 212081-SQ9945BEY-T1- GE3 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Arrays Series: TrenchFET? Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 175°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Manufacturer Device Package: 8-SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.4A Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250μA Gate Charge (Qg) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) @ Vds: 470pF @ 25V Power - Max: 4W Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: Vishay-Siliconix
Win Source Part Number: 212081-SQ9945BEY-T1-GE3
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Arrays
Series: TrenchFET?
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package: 8-SO
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250μA
Gate Charge (Qg) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) @ Vds: 470pF @ 25V
Power - Max: 4W
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Radwell International Win Source Electronics
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 39148558 212081-SQ9945BEY-T1-GE3
Product Name Transistor Discrete Semiconductor Products
Polarity N-Channel
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