Vishay Intertechnology, Inc. Single FETs, MOSFETs SQ9407EY-T1_GE3

Description
P-Channel 60V 4.6A (Tc) 3.75W (Tc) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
P-Channel 60V 4.6A (Tc) 3.75W (Tc) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SQ9407EY-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ9407EY-T1_GE3CT-ND
Single FETs, MOSFETs SQ9407EY-T1_GE3CT-ND
P-Channel 60V 4.6A (Tc) 3.75W (Tc) Surface Mount 8-SOIC

P-Channel 60V 4.6A (Tc) 3.75W (Tc) Surface Mount 8-SOIC

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Single FETs, MOSFETs - SQ9407EY-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ9407EY-T1_GE3TR-ND
Single FETs, MOSFETs SQ9407EY-T1_GE3TR-ND
P-Channel 60V 4.6A (Tc) 3.75W (Tc) Surface Mount 8-SOIC

P-Channel 60V 4.6A (Tc) 3.75W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
P-Channel 4.6A 60V MOSFET Transistor
2088-SQ9407EY-T1_GE3
P-Channel 4.6A 60V MOSFET Transistor 2088-SQ9407EY-T1_GE3
Small Signal Field-Effect Transistor, 4.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Product overview: SQ9407EY-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 4.6A, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4.6A, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQ9407EY-T1_GE3 can be used for catalog matching and distributor lookup.

Small Signal Field-Effect Transistor, 4.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Product overview: SQ9407EY-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 4.6A, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4.6A, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQ9407EY-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ9407EY-T1_GE3 - 1101717-SQ9407EY-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ9407EY-T1_GE3
1101717-SQ9407EY-T1_GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ9407EY-T1_GE3 1101717-SQ9407EY-T1_GE3
Manufacturer: Vishay Win Source Part Number: 1101717-SQ9407EY-T1_ GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TA) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1140pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1101717-SQ9407EY-T1_GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TA)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.6A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1140pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SQ9407EY-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQ9407EY-T1_GE3
Single FETs, MOSFETs SQ9407EY-T1_GE3
MOSFET P-CHANNEL 60V 4.6A 8SO

MOSFET P-CHANNEL 60V 4.6A 8SO

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQ9407EY-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQ9407EY-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQ9407EY-T1_GE3
MOSFET P-CHANNEL 60V 4.6A 8SO

MOSFET P-CHANNEL 60V 4.6A 8SO

Supplier's Site
Mosfet, P-Ch, 60V, 4.6A, 175Deg C, 3.75W Rohs Compliant Vishay - 75AH9258 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 60V, 4.6A, 175Deg C, 3.75W Rohs Compliant Vishay
75AH9258
Mosfet, P-Ch, 60V, 4.6A, 175Deg C, 3.75W Rohs Compliant Vishay 75AH9258
MOSFET, P-CH, 60V, 4.6A, 175DEG C, 3.75W ROHS COMPLIANT: YES

MOSFET, P-CH, 60V, 4.6A, 175DEG C, 3.75W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -60V -4.6A 3.75W AEC-Q101 Qualified

MOSFET -60V -4.6A 3.75W AEC-Q101 Qualified

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Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SQ9407EY-T1_GE3CT-ND 2088-SQ9407EY-T1_GE3 1101717-SQ9407EY-T1_GE3 SQ9407EY-T1_GE3 SQ9407EY-T1_GE3 75AH9258 SQ9407EY-T1_GE3
Product Name Single FETs, MOSFETs P-Channel 4.6A 60V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ9407EY-T1_GE3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, 60V, 4.6A, 175Deg C, 3.75W Rohs Compliant Vishay MOSFET
Polarity P-Channel P-Channel P-Channel; P-Channel P-Channel; P-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154, 3.90mm Width) TO-3
Transistor Grade / Operating Range Automotive
PD 3750 milliwatts 3750 milliwatts 3750 milliwatts
TJ -55 C (-67 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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