Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ9407EY-T1_GE3 SQ9407EY-T1_GE3

Description
Manufacturer: Vishay Win Source Part Number: 1101717-SQ9407EY-T1_ GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TA) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1140pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1101717-SQ9407EY-T1_ GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TA) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1140pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ9407EY-T1_GE3 - 1101717-SQ9407EY-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ9407EY-T1_GE3
1101717-SQ9407EY-T1_GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ9407EY-T1_GE3 1101717-SQ9407EY-T1_GE3
Manufacturer: Vishay Win Source Part Number: 1101717-SQ9407EY-T1_ GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TA) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1140pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1101717-SQ9407EY-T1_GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TA)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.6A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1140pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
P-Channel 4.6A 60V MOSFET Transistor
2088-SQ9407EY-T1_GE3
P-Channel 4.6A 60V MOSFET Transistor 2088-SQ9407EY-T1_GE3
Small Signal Field-Effect Transistor, 4.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Product overview: SQ9407EY-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 4.6A, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4.6A, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQ9407EY-T1_GE3 can be used for catalog matching and distributor lookup.

Small Signal Field-Effect Transistor, 4.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Product overview: SQ9407EY-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 4.6A, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4.6A, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQ9407EY-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SQ9407EY-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ9407EY-T1_GE3CT-ND
Single FETs, MOSFETs SQ9407EY-T1_GE3CT-ND
P-Channel 60V 4.6A (Tc) 3.75W (Tc) Surface Mount 8-SOIC

P-Channel 60V 4.6A (Tc) 3.75W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SQ9407EY-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ9407EY-T1_GE3TR-ND
Single FETs, MOSFETs SQ9407EY-T1_GE3TR-ND
P-Channel 60V 4.6A (Tc) 3.75W (Tc) Surface Mount 8-SOIC

P-Channel 60V 4.6A (Tc) 3.75W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET -60V -4.6A 3.75W AEC-Q101 Qualified

MOSFET -60V -4.6A 3.75W AEC-Q101 Qualified

Buy Now Datasheet
Mosfet, P-Ch, 60V, 4.6A, 175Deg C, 3.75W Rohs Compliant Vishay - 75AH9258 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 60V, 4.6A, 175Deg C, 3.75W Rohs Compliant Vishay
75AH9258
Mosfet, P-Ch, 60V, 4.6A, 175Deg C, 3.75W Rohs Compliant Vishay 75AH9258
MOSFET, P-CH, 60V, 4.6A, 175DEG C, 3.75W ROHS COMPLIANT: YES

MOSFET, P-CH, 60V, 4.6A, 175DEG C, 3.75W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Single FETs, MOSFETs - SQ9407EY-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQ9407EY-T1_GE3
Single FETs, MOSFETs SQ9407EY-T1_GE3
MOSFET P-CHANNEL 60V 4.6A 8SO

MOSFET P-CHANNEL 60V 4.6A 8SO

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQ9407EY-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQ9407EY-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQ9407EY-T1_GE3
MOSFET P-CHANNEL 60V 4.6A 8SO

MOSFET P-CHANNEL 60V 4.6A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1101717-SQ9407EY-T1_GE3 2088-SQ9407EY-T1_GE3 SQ9407EY-T1_GE3CT-ND SQ9407EY-T1_GE3 75AH9258 SQ9407EY-T1_GE3 SQ9407EY-T1_GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ9407EY-T1_GE3 P-Channel 4.6A 60V MOSFET Transistor Single FETs, MOSFETs MOSFET Mosfet, P-Ch, 60V, 4.6A, 175Deg C, 3.75W Rohs Compliant Vishay Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 60 volts 60 volts
PD 3750 milliwatts 3750 milliwatts 3750 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; 8-SO "8-SOIC (0.154"", 3.90mm Width)" TO-3 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154, 3.90mm Width)
Unlock Full Specs
to access all available technical data