Small Signal Field-Effect Transistor, 4.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Product overview: SQ9407EY-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 4.6A, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4.6A, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQ9407EY-T1_GE3
P-Channel 60V 4.6A (Tc) 3.75W (Tc) Surface Mount 8-SOIC
P-Channel 60V 4.6A (Tc) 3.75W (Tc) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 1101717-SQ9407EY-T1_
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TA)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.6A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1140pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
MOSFET, P-CH, 60V, 4.6A, 175DEG C, 3.75W ROHS COMPLIANT: YES
MOSFET -60V -4.6A 3.75W AEC-Q101 Qualified
MOSFET P-CHANNEL 60V 4.6A 8SO
MOSFET P-CHANNEL 60V 4.6A 8SO
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-SQ9407EY-T1_GE3 | SQ9407EY-T1_GE3CT-ND | 1101717-SQ9407EY-T1_GE3 | 75AH9258 | SQ9407EY-T1_GE3 | SQ9407EY-T1_GE3 | SQ9407EY-T1_GE3 |
| Product Name | P-Channel 4.6A 60V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ9407EY-T1_GE3 | Mosfet, P-Ch, 60V, 4.6A, 175Deg C, 3.75W Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | |||
| PD | 3750 milliwatts | 3750 milliwatts | 3750 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | TO-3 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | ||
| Transistor Grade / Operating Range | Automotive |
