Power Field-Effect Transistor, 18A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Product overview: SQ7414CENW-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 18A, 60V, 0.028ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 18A, 60V, 0.028ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ7414CENW-T1_GE
N-Channel 60V 18A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8W
N-Channel 60V 18A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8W
N-Channel 60V 18A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8W
MOSFET N-CH 60V 18A PPAK1212-8W
Manufacturer: Vishay
Win Source Part Number: 897208-SQ7414CENW-T1
Series: Automotive, AEC-Q101, TrenchFET®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 60 V 18A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8W
Package: PowerPAK® 1212-8W
Package: Reel - TR
Mounting: Surface Mount
Family Name: SQ7414
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8W
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQ7414CENW-T1_GE3DKR
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8W
MOSFET, N-CH, 60V, 18A, 175DEG C, 62W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:62W; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET N-CH 60V 18A PPAK1212-8W
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SQ7414CENW-T1_GE3 | SQ7414CENW-T1_GE3CT-ND | SQ7414CENW-T1_GE3 | 897208-SQ7414CENW-T1_GE3 | SQ7414CENW-T1_GE3 | 61AC8304 | SQ7414CENW-T1_GE3 |
| Product Name | N-Channel 18A 60V 0.028ohm MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ7414CENW-T1_GE3 | MOSFET | Mosfet, N-Ch, 60V, 18A, 175Deg C, 62W; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | PowerPAK® 1212-8W | PowerPAK® 1212-8W | SOT3; PowerPAK® 1212-8W | TO-3 | PowerPAKR 1212-8W | ||
| Transistor Grade / Operating Range | Automotive | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
