Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4936EY-T1-GE3 SQ4936EY-T1-GE3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1095785-SQ4936EY-T1- GE3 Packaging: Cut Tape Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Number of Elements: 2 Input Capacitance: 830 pF Power Dissipation: 3.3 W Number of Pins: 8 Rise Time: 11 ns Fall Time: 7 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOIC Popularity: Low Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C REACH SVHC: Unknown Element Configuration: Dual Max Power Dissipation: 3.3 W Turn-On Delay Time: 9 ns Continuous Drain Current (ID): 7 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 18 ns Drain to Source Resistance: 36 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 36 mΩ Threshold Voltage: 2 V
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1095785-SQ4936EY-T1- GE3 Packaging: Cut Tape Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Number of Elements: 2 Input Capacitance: 830 pF Power Dissipation: 3.3 W Number of Pins: 8 Rise Time: 11 ns Fall Time: 7 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOIC Popularity: Low Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C REACH SVHC: Unknown Element Configuration: Dual Max Power Dissipation: 3.3 W Turn-On Delay Time: 9 ns Continuous Drain Current (ID): 7 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 18 ns Drain to Source Resistance: 36 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 36 mΩ Threshold Voltage: 2 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4936EY-T1-GE3 - 1095785-SQ4936EY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4936EY-T1-GE3
1095785-SQ4936EY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4936EY-T1-GE3 1095785-SQ4936EY-T1-GE3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1095785-SQ4936EY-T1- GE3 Packaging: Cut Tape Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Number of Elements: 2 Input Capacitance: 830 pF Power Dissipation: 3.3 W Number of Pins: 8 Rise Time: 11 ns Fall Time: 7 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOIC Popularity: Low Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C REACH SVHC: Unknown Element Configuration: Dual Max Power Dissipation: 3.3 W Turn-On Delay Time: 9 ns Continuous Drain Current (ID): 7 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 18 ns Drain to Source Resistance: 36 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 36 mΩ Threshold Voltage: 2 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1095785-SQ4936EY-T1-GE3
Packaging: Cut Tape
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 30 V
Number of Elements: 2
Input Capacitance: 830 pF
Power Dissipation: 3.3 W
Number of Pins: 8
Rise Time: 11 ns
Fall Time: 7 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOIC
Popularity: Low
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
REACH SVHC: Unknown
Element Configuration: Dual
Max Power Dissipation: 3.3 W
Turn-On Delay Time: 9 ns
Continuous Drain Current (ID): 7 A
Drain to Source Breakdown Voltage: 30 V
Turn-Off Delay Time: 18 ns
Drain to Source Resistance: 36 mΩ
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 36 mΩ
Threshold Voltage: 2 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1095785-SQ4936EY-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4936EY-T1-GE3
V(BR)DSS 30 volts
rDS(on) 0.0360 ohms
PD 3300 milliwatts
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