Vishay Intertechnology, Inc. Single FETs, MOSFETs SQ4840EY-T1_GE3

MOSFET N-CH 40V 20.7A 8SO

MOSFET N-CH 40V 20.7A 8SO Product overview: SQ4840EY-T1_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 20.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 20.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ4840EY-T1_GE3 can be used for catalog matching and distributor lookup.

N-Channel 40V 20.7A (Tc) 7.1W (Tc) Surface Mount 8-SOIC

N-Channel 40V 20.7A (Tc) 7.1W (Tc) Surface Mount 8-SOIC

N-Channel 40V 20.7A (Tc) 7.1W (Tc) Surface Mount 8-SOIC

Manufacturer: Vishay
Win Source Part Number: 1101712-SQ4840EY-T1_GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 7.1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 20.7A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 2440pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient