Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4431EY-T1_GE3 SQ4431EY-T1_GE3

Description
Manufacturer: Vishay Win Source Part Number: 1101711-SQ4431EY-T1_ GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.8A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 1265pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 30 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1101711-SQ4431EY-T1_ GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.8A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 1265pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 30 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4431EY-T1_GE3 - 1101711-SQ4431EY-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4431EY-T1_GE3
1101711-SQ4431EY-T1_GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4431EY-T1_GE3 1101711-SQ4431EY-T1_GE3
Manufacturer: Vishay Win Source Part Number: 1101711-SQ4431EY-T1_ GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.8A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 1265pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 30 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1101711-SQ4431EY-T1_GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10.8A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 1265pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 30 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFETs - 8193920P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8193920P
MOSFETs 8193920P
Trans MOSFET P-CH 30V 10.8A

Trans MOSFET P-CH 30V 10.8A

Supplier's Site
MOSFETs - 8193920 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8193920
MOSFETs 8193920
Trans MOSFET P-CH 30V 10.8A

Trans MOSFET P-CH 30V 10.8A

Supplier's Site
MOSFETs - 1656285 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1656285
MOSFETs 1656285
Trans MOSFET P-CH 30V 10.8A

Trans MOSFET P-CH 30V 10.8A

Supplier's Site
Singapore, Singapore
P-Channel 7.2A 30V MOSFET Transistor
2088-SQ4431EY-T1_GE3
P-Channel 7.2A 30V MOSFET Transistor 2088-SQ4431EY-T1_GE3
Small Signal Field-Effect Transistor, 7.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Product overview: SQ4431EY-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 7.2A, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 7.2A, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQ4431EY-T1_GE3 can be used for catalog matching and distributor lookup.

Small Signal Field-Effect Transistor, 7.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Product overview: SQ4431EY-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 7.2A, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 7.2A, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQ4431EY-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SQ4431EY-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ4431EY-T1_GE3TR-ND
Single FETs, MOSFETs SQ4431EY-T1_GE3TR-ND
P-Channel 30V 10.8A (Tc) 6W (Tc) Surface Mount 8-SOIC

P-Channel 30V 10.8A (Tc) 6W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SQ4431EY-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ4431EY-T1_GE3DKR-ND
Single FETs, MOSFETs SQ4431EY-T1_GE3DKR-ND
P-Channel 30V 10.8A (Tc) 6W (Tc) Surface Mount 8-SOIC

P-Channel 30V 10.8A (Tc) 6W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SQ4431EY-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ4431EY-T1_GE3CT-ND
Single FETs, MOSFETs SQ4431EY-T1_GE3CT-ND
P-Channel 30V 10.8A (Tc) 6W (Tc) Surface Mount 8-SOIC

P-Channel 30V 10.8A (Tc) 6W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 30V 10.8A 6W AEC-Q101 Qualified

MOSFET 30V 10.8A 6W AEC-Q101 Qualified

Buy Now Datasheet
Single FETs, MOSFETs - SQ4431EY-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQ4431EY-T1_GE3
Single FETs, MOSFETs SQ4431EY-T1_GE3
MOSFET P-CH 30V 10.8A 8SO

MOSFET P-CH 30V 10.8A 8SO

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQ4431EY-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQ4431EY-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQ4431EY-T1_GE3
MOSFET P-CH 30V 10.8A 8SO

MOSFET P-CH 30V 10.8A 8SO

Supplier's Site
Mosfet, P-Ch, 30V, 10.8A, 175Deg C, 6W Rohs Compliant Vishay - 75AH9253 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 30V, 10.8A, 175Deg C, 6W Rohs Compliant Vishay
75AH9253
Mosfet, P-Ch, 30V, 10.8A, 175Deg C, 6W Rohs Compliant Vishay 75AH9253
MOSFET, P-CH, 30V, 10.8A, 175DEG C, 6W ROHS COMPLIANT: YES

MOSFET, P-CH, 30V, 10.8A, 175DEG C, 6W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Automotive P-Channel 30 V (D-S) 175 °C MOSFET - 880-SQ4431EY-T1_GE3 - Utmel Electronic Limited
Hong Kong, China
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
880-SQ4431EY-T1_GE3
Automotive P-Channel 30 V (D-S) 175 °C MOSFET 880-SQ4431EY-T1_GE3
Automotive P-Channel 30 V (D-S) 175 °C MOSFET

Automotive P-Channel 30 V (D-S) 175 °C MOSFET

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1101711-SQ4431EY-T1_GE3 8193920P 8193920 2088-SQ4431EY-T1_GE3 SQ4431EY-T1_GE3TR-ND SQ4431EY-T1_GE3 SQ4431EY-T1_GE3 SQ4431EY-T1_GE3 75AH9253 880-SQ4431EY-T1_GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4431EY-T1_GE3 MOSFETs MOSFETs P-Channel 7.2A 30V MOSFET Transistor Single FETs, MOSFETs MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, 30V, 10.8A, 175Deg C, 6W Rohs Compliant Vishay Automotive P-Channel 30 V (D-S) 175 °C MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts 30 volts -30 volts
PD 6000 milliwatts 6000 milliwatts 6000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; 8-SO SOIC Soic "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154, 3.90mm Width) TO-3
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