MOSFET P-CH 30V 10.8A 8SOIC
P-Channel 30V 10.8A (Tc) 6W (Tc) Surface Mount 8-SOIC
P-Channel 30V 10.8A (Tc) 6W (Tc) Surface Mount 8-SOIC
P-Channel 30V 10.8A (Tc) 6W (Tc) Surface Mount 8-SOIC
MOSFET P-CH 30V 10.8A 8SOIC
MOSFET, P-CH, 30V, 10.8A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V
| ODG (Origin Data Global) | DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQ4431EY-T1_BE3 | 742-SQ4431EY-T1_BE3DKR-ND | SQ4431EY-T1_BE3 | 78AH6710 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 30V, 10.8A, Soic; Channel Type Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 30 volts | |||
| IDSS | 10800 milliamps | 10800 milliamps | ||
| PD | 6000 milliwatts |
