Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4410EY-T1_GE3 SQ4410EY-T1_GE3

Description
Manufacturer: Vishay Win Source Part Number: 1101710-SQ4410EY-T1_ GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 53nC @ 10V Max Input Capacitance: 2385pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4410EY-T1_GE3 - 1101710-SQ4410EY-T1_GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SQ4410EY-T1_GE3TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SQ4410EY-T1_GE3DKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SQ4410EY-T1_GE3CT-ND - DigiKey
    DigiKey
  • MOSFETs - 2567441 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 2567440 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 2567441P - RS Components, Ltd.
    RS Components, Ltd.
  • Mosfet, N-Ch, 30V, 15A, Soic Rohs Compliant Vishay - 26AK5832 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQ4410EY-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1101710-SQ4410EY-T1_ GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 53nC @ 10V Max Input Capacitance: 2385pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4410EY-T1_GE3 - 1101710-SQ4410EY-T1_GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4410EY-T1_GE3
1101710-SQ4410EY-T1_GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4410EY-T1_GE3 1101710-SQ4410EY-T1_GE3
Manufacturer: Vishay Win Source Part Number: 1101710-SQ4410EY-T1_ GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 53nC @ 10V Max Input Capacitance: 2385pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1101710-SQ4410EY-T1_GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 15A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 2385pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SQ4410EY-T1_GE3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ4410EY-T1_GE3TR-ND
Single FETs, MOSFETs SQ4410EY-T1_GE3TR-ND
N-Channel 30V 15A (Tc) 5W (Tc) Surface Mount 8-SOIC

N-Channel 30V 15A (Tc) 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SQ4410EY-T1_GE3DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ4410EY-T1_GE3DKR-ND
Single FETs, MOSFETs SQ4410EY-T1_GE3DKR-ND
N-Channel 30V 15A (Tc) 5W (Tc) Surface Mount 8-SOIC

N-Channel 30V 15A (Tc) 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SQ4410EY-T1_GE3CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ4410EY-T1_GE3CT-ND
Single FETs, MOSFETs SQ4410EY-T1_GE3CT-ND
N-Channel 30V 15A (Tc) 5W (Tc) Surface Mount 8-SOIC

N-Channel 30V 15A (Tc) 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
MOSFETs - 2567441 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567441
MOSFETs 2567441
AEQC101 N-CHANNEL 30-V (D-S) 175C MOSFET

AEQC101 N-CHANNEL 30-V (D-S) 175C MOSFET

Supplier's Site
MOSFETs - 2567440 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567440
MOSFETs 2567440
AEQC101 N-CHANNEL 30-V (D-S) 175C MOSFET

AEQC101 N-CHANNEL 30-V (D-S) 175C MOSFET

Supplier's Site
MOSFETs - 2567441P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567441P
MOSFETs 2567441P
AEQC101 N-CHANNEL 30-V (D-S) 175C MOSFET

AEQC101 N-CHANNEL 30-V (D-S) 175C MOSFET

Supplier's Site
Mosfet, N-Ch, 30V, 15A, Soic Rohs Compliant Vishay - 26AK5832 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 15A, Soic Rohs Compliant Vishay
26AK5832
Mosfet, N-Ch, 30V, 15A, Soic Rohs Compliant Vishay 26AK5832
MOSFET, N-CH, 30V, 15A, SOIC ROHS COMPLIANT: YES

MOSFET, N-CH, 30V, 15A, SOIC ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQ4410EY-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQ4410EY-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQ4410EY-T1_GE3
MOSFET N-CH 30V 15A 8SO

MOSFET N-CH 30V 15A 8SO

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SQ4410EY-T1_GE3
MOSFET SQ4410EY-T1_GE3
MOSFET 30V 15A 5W AEC-Q101 Qualified

MOSFET 30V 15A 5W AEC-Q101 Qualified

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1101710-SQ4410EY-T1_GE3 SQ4410EY-T1_GE3TR-ND 2567441 26AK5832 SQ4410EY-T1_GE3 SQ4410EY-T1_GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4410EY-T1_GE3 Single FETs, MOSFETs MOSFETs Mosfet, N-Ch, 30V, 15A, Soic Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 5000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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