P-Channel JFET, -40V, -17.3A, SOIC-8, Surface Mount Product overview: SQ4401EY-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -40V, -17.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -40V, -17.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ4401EY-T1_GE3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 40V 17.3A 8SO
P-Channel 40V 17.3A (Tc) 7.14W (Tc) Surface Mount 8-SOIC
P-Channel 40V 17.3A (Tc) 7.14W (Tc) Surface Mount 8-SOIC
MOSFET, P-CH, 40V, 17.3A, 175DEGC, 7.14W ROHS COMPLIANT: YES
MOSFET P-CH 40V 17.3A 8SO
MOSFET 40V 17.3A 7.14W AEC-Q101 Qualified
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQ4401EY-T1_GE3 | SQ4401EY-T1_GE3 | SQ4401EY-T1_GE3CT-ND | 75AH9252 | SQ4401EY-T1_GE3 | SQ4401EY-T1_GE3 |
| Product Name | P-Channel SMD -40V -17.3A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, 40V, 17.3A, 175Degc, 7.14W Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | |||
| PD | 7140 milliwatts | 7140 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 40 volts |