Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ4284EY-T1_GE3 SQ4284EY-T1_GE3

Manufacturer: Vishay
Win Source Part Number: 1101709-SQ4284EY-T1_GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.9W
Drain-Source Breakdown Voltage: 40V
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2200pF @ 25V
Maximum Rds On at Id,Vgs: 13.5 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient

Mosfet Array 2 N-Channel (Dual) 40V 3.9W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 40V 3.9W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 40V 3.9W Surface Mount 8-SOIC

MOSFET 2N-CH 40V 8A 8SOIC

MOSFET 2N-CH 40V 8SOIC Product overview: SQ4284EY-T1_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SQ4284EY-T1_GE3 can be used for catalog matching and distributor lookup.