Vishay Intertechnology, Inc. P-Channel 12V 25A MOSFET Transistor SQ4153EY-T1_GE3

MOSFET P-CHANNEL 12V 25A 8SOIC Product overview: SQ4153EY-T1_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 12V, 25A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 25A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ4153EY-T1_GE3 can be used for catalog matching and distributor lookup.

P-Channel 12V 25A (Tc) 7.1W (Tc) Surface Mount 8-SOIC

P-Channel 12V 25A (Tc) 7.1W (Tc) Surface Mount 8-SOIC

P-Channel 12V 25A (Tc) 7.1W (Tc) Surface Mount 8-SOIC

Win Source Part Number: 1277823-SQ4153EY-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 7.1W (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 6 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQ4153EY-T1_GE3DKR,SQ4153EY-T1_GE3TR,SQ4153EY-T1_GE3CT,SQ4153EY-T1_GE3
Base Product Number: SQ4153
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V