Vishay Intertechnology, Inc. FET, MOSFET Arrays SQ3989EV-T1_GE3

Description
MOSFET 2 P-CH 30V 2.5A 6TSOP
Request a Quote Datasheet
Description
MOSFET 2 P-CH 30V 2.5A 6TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SQ3989EV-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SQ3989EV-T1_GE3
FET, MOSFET Arrays SQ3989EV-T1_GE3
MOSFET 2 P-CH 30V 2.5A 6TSOP

MOSFET 2 P-CH 30V 2.5A 6TSOP

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 1095779-SQ3989EV-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
1095779-SQ3989EV-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 1095779-SQ3989EV-T1_GE3
Win Source Part Number: 1095779-SQ3989EV-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Power - Max: 1.67W Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): SQ3989EV-T1_GE3SQ398 9EV-T1-GE3; ECCN: EAR99 Fake Threat In the Open Market: 54 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQ3989EV-T1_GE3CT,SQ 3989EV-T1_GE3TR,SQ39 89EV-T1_GE3DKR Base Product Number: SQ3989

Win Source Part Number: 1095779-SQ3989EV-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power - Max: 1.67W
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SQ3989EV-T1_GE3SQ3989EV-T1-GE3;
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQ3989EV-T1_GE3CT,SQ3989EV-T1_GE3TR,SQ3989EV-T1_GE3DKR
Base Product Number: SQ3989

Buy Now Datasheet
FET, MOSFET Arrays - SQ3989EV-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SQ3989EV-T1_GE3DKR-ND
FET, MOSFET Arrays SQ3989EV-T1_GE3DKR-ND
Mosfet Array 2 P-Channel (Dual) 30V 2.5A (Tc) 1.67W Surface Mount 6-TSOP

Mosfet Array 2 P-Channel (Dual) 30V 2.5A (Tc) 1.67W Surface Mount 6-TSOP

Buy Now Datasheet
FET, MOSFET Arrays - SQ3989EV-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SQ3989EV-T1_GE3CT-ND
FET, MOSFET Arrays SQ3989EV-T1_GE3CT-ND
Mosfet Array 2 P-Channel (Dual) 30V 2.5A (Tc) 1.67W Surface Mount 6-TSOP

Mosfet Array 2 P-Channel (Dual) 30V 2.5A (Tc) 1.67W Surface Mount 6-TSOP

Buy Now Datasheet
FET, MOSFET Arrays - SQ3989EV-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SQ3989EV-T1_GE3TR-ND
FET, MOSFET Arrays SQ3989EV-T1_GE3TR-ND
Mosfet Array 2 P-Channel (Dual) 30V 2.5A (Tc) 1.67W Surface Mount 6-TSOP

Mosfet Array 2 P-Channel (Dual) 30V 2.5A (Tc) 1.67W Surface Mount 6-TSOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQ3989EV-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQ3989EV-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQ3989EV-T1_GE3
MOSFET 2P-CH 30V 2.5A 6TSOP

MOSFET 2P-CH 30V 2.5A 6TSOP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Dual P-Channel 30V TSOP-6

MOSFET Dual P-Channel 30V TSOP-6

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SQ3989EV-T1_GE3 1095779-SQ3989EV-T1_GE3 SQ3989EV-T1_GE3DKR-ND SQ3989EV-T1_GE3 SQ3989EV-T1_GE3
Product Name FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; 2 P-Channel (Dual) P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts
IDSS 2500 milliamps
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