MOSFET 2 P-CH 30V 2.5A 6TSOP
Win Source Part Number: 1095779-SQ3989EV-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power - Max: 1.67W
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SQ3989EV-T1_GE3SQ398
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQ3989EV-T1_GE3CT,SQ
Base Product Number: SQ3989
Mosfet Array 2 P-Channel (Dual) 30V 2.5A (Tc) 1.67W Surface Mount 6-TSOP
Mosfet Array 2 P-Channel (Dual) 30V 2.5A (Tc) 1.67W Surface Mount 6-TSOP
Mosfet Array 2 P-Channel (Dual) 30V 2.5A (Tc) 1.67W Surface Mount 6-TSOP
MOSFET 2P-CH 30V 2.5A 6TSOP
MOSFET Dual P-Channel 30V TSOP-6
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQ3989EV-T1_GE3 | 1095779-SQ3989EV-T1_GE3 | SQ3989EV-T1_GE3DKR-ND | SQ3989EV-T1_GE3 | SQ3989EV-T1_GE3 |
| Product Name | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 30 volts | ||||
| IDSS | 2500 milliamps |