MOSFET 2 P-CH 30V 2.5A 6TSOP
Mosfet Array 2 P-Channel (Dual) 30V 2.5A (Tc) 1.67W Surface Mount 6-TSOP
Mosfet Array 2 P-Channel (Dual) 30V 2.5A (Tc) 1.67W Surface Mount 6-TSOP
Mosfet Array 2 P-Channel (Dual) 30V 2.5A (Tc) 1.67W Surface Mount 6-TSOP
Trans MOSFET P-CH 30V 2.5A Automotive 6-Pin TSOP T/R Product overview: SQ3989EV-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 30V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 30V, 2.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ3989EV-T1_GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1095779-SQ3989EV-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power - Max: 1.67W
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SQ3989EV-T1_GE3SQ398
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQ3989EV-T1_GE3CT,SQ
Base Product Number: SQ3989
MOSFET Dual P-Channel 30V TSOP-6
MOSFET 2P-CH 30V 2.5A 6TSOP
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SQ3989EV-T1_GE3 | SQ3989EV-T1_GE3DKR-ND | 278-SQ3989EV-T1_GE3 | 1095779-SQ3989EV-T1_GE3 | SQ3989EV-T1_GE3 | SQ3989EV-T1_GE3 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Automotive 30V 2.5A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 2500 milliamps | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) |
