Small Signal Field-Effect Transistor, 3A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 Product overview: SQ3987EV-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 3A, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3A, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ3987EV-T1_GE3 can be used for catalog matching and distributor lookup.
MOSFET 2 P-CHANNEL 30V 3A 6TSOP
Mosfet Array 2 P-Channel (Dual) 30V 3A (Tc) 1.67W Surface Mount 6-TSOP
Mosfet Array 2 P-Channel (Dual) 30V 3A (Tc) 1.67W Surface Mount 6-TSOP
Mosfet Array 2 P-Channel (Dual) 30V 3A (Tc) 1.67W Surface Mount 6-TSOP
Win Source Part Number: 1278517-SQ3987EV-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 1.67W
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQ3987EV-T1_GE3DKR,S
Base Product Number: SQ3987
MOSFET, AEC-Q101, DUAL P-CH, -30V, -3A; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; RoHS Compliant: Yes
MOSFET 2P-CH 30V 3A 6TSOP
MOSFET Dual P-Ch -30V AEC-Q101 Qualified
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQ3987EV-T1_GE3 | SQ3987EV-T1_GE3 | SQ3987EV-T1_GE3TR-ND | 1278517-SQ3987EV-T1_GE3 | 81AC2831 | SQ3987EV-T1_GE3 | SQ3987EV-T1_GE3 |
| Product Name | P-Channel 3A 30V MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | Mosfet, Aec-Q101, Dual P-Ch, -30V, -3A; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |||||
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | ||||||
| IDSS | 3000 milliamps | -3000 milliamps |
