MOSFET P-CH 60V 5.3A 6TSOP
P-Channel 60V 5.3A (Tc) 5W (Tc) Surface Mount 6-TSOP
P-Channel 60V 5.3A (Tc) 5W (Tc) Surface Mount 6-TSOP
P-Channel 60V 5.3A (Tc) 5W (Tc) Surface Mount 6-TSOP
MOSFET, P-CH, 60V, 5.3A, TSOP; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V
MOSFET, P-CH, 60V, 5.3A, TSOP; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V
MOSFET P-CH 60V 5.3A 6TSOP
| ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SQ3427EV-T1_BE3 | 742-SQ3427EV-T1_BE3CT-ND | 78AH6696 | SQ3427EV-T1_BE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, 60V, 5.3A, Tsop; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 60 volts | |||
| IDSS | 5300 milliamps | 5300 milliamps | ||
| PD | 5000 milliwatts |
