MOSFET N-CH 60V 7A 6TSOP
Manufacturer: Vishay
Win Source Part Number: 1101703-SQ3426EEV-T1
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 12nC @ 4.5V
Max Input Capacitance: 700pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 42 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
MOSFET 60V 7A 5W N-Ch Automotive
MOSFET N-CH 60V 7A 6TSOP
| ODG (Origin Data Global) | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SQ3426EEV-T1-GE3 | 1101703-SQ3426EEV-T1-GE3 | 880-SQ3426EEV-T1-GE3 | SQ3426EEV-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ3426EEV-T1-GE3 | MOSFET 60V 7A 5W N-Ch Automotive | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |
| IDSS | 7000 milliamps | |||
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; 6-TSOP | SOT23; SOT-23-6 Thin, TSOT-23-6 |
