Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ3426EEV-T1-GE3 SQ3426EEV-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1101703-SQ3426EEV-T1 -GE3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 12nC @ 4.5V Max Input Capacitance: 700pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 42 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1101703-SQ3426EEV-T1 -GE3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 12nC @ 4.5V Max Input Capacitance: 700pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 42 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ3426EEV-T1-GE3 - 1101703-SQ3426EEV-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ3426EEV-T1-GE3
1101703-SQ3426EEV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ3426EEV-T1-GE3 1101703-SQ3426EEV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1101703-SQ3426EEV-T1 -GE3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 12nC @ 4.5V Max Input Capacitance: 700pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 42 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1101703-SQ3426EEV-T1-GE3
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 12nC @ 4.5V
Max Input Capacitance: 700pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 42 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SQ3426EEV-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQ3426EEV-T1-GE3
Single FETs, MOSFETs SQ3426EEV-T1-GE3
MOSFET N-CH 60V 7A 6TSOP

MOSFET N-CH 60V 7A 6TSOP

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQ3426EEV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQ3426EEV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQ3426EEV-T1-GE3
MOSFET N-CH 60V 7A 6TSOP

MOSFET N-CH 60V 7A 6TSOP

Supplier's Site
MOSFET 60V 7A 5W N-Ch Automotive - 880-SQ3426EEV-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET 60V 7A 5W N-Ch Automotive
880-SQ3426EEV-T1-GE3
MOSFET 60V 7A 5W N-Ch Automotive 880-SQ3426EEV-T1-GE3
MOSFET 60V 7A 5W N-Ch Automotive

MOSFET 60V 7A 5W N-Ch Automotive

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1101703-SQ3426EEV-T1-GE3 SQ3426EEV-T1-GE3 SQ3426EEV-T1-GE3 880-SQ3426EEV-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ3426EEV-T1-GE3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET 60V 7A 5W N-Ch Automotive
Polarity N-Channel; N-Channel N-Channel; N-Channel
V(BR)DSS 60 volts 60 volts 60 volts
PD 5000 milliwatts 5000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; SOT23; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6
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