Win Source Part Number: 1379979-SQ3419EV-T1_
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Product Status: Active
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Product Number: SQ3419
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
Power Dissipation (Max): 5W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
ECCN: EAR99
MOSFET P-CH 40V 6.9A 6TSOP
P-Channel 40V 6.9A (Tc) 5W (Tc) Surface Mount 6-TSOP
P-Channel 40V 6.9A (Tc) 5W (Tc) Surface Mount 6-TSOP
P-Channel 40V 6.9A (Tc) 5W (Tc) Surface Mount 6-TSOP
MOSFET, P-CH, 40V, 6.9A, TSOP; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET, P-CH, 40V, 6.9A, TSOP; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET P-CH 40V 6.9A 6TSOP
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1379979-SQ3419EV-T1_BE3 | SQ3419EV-T1_BE3 | 742-SQ3419EV-T1_BE3DKR-ND | 82AH6216 | SQ3419EV-T1_BE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, 40V, 6.9A, Tsop; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | ||
| PD | 5000 milliwatts | 5000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | SOT3 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 | SOT23; SOT-23-6 Thin, TSOT-23-6 |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
