Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ3418AEEV-T1_GE3 SQ3418AEEV-T1_GE3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 763346-SQ3418AEEV-T1 _GE3 Series: TrenchFET Operating Temperature Range: -55°C ~ 175°C (TJ) Package: SOT-23-6 Thin, TSOT-23-6 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Family Name: SQ3418AEEV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: 6-TSOP Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 370pF @ 15V Vgs (Maximum): ±20V Power Dissipation (Maximum): 4W (Tc) Rds On (Maximum) @ Id, Vgs: 35 mOhm @ 6A, 10V ECCN: EAR99 Estimated EOL Date: 2028 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 763346-SQ3418AEEV-T1 _GE3 Series: TrenchFET Operating Temperature Range: -55°C ~ 175°C (TJ) Package: SOT-23-6 Thin, TSOT-23-6 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Family Name: SQ3418AEEV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: 6-TSOP Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 370pF @ 15V Vgs (Maximum): ±20V Power Dissipation (Maximum): 4W (Tc) Rds On (Maximum) @ Id, Vgs: 35 mOhm @ 6A, 10V ECCN: EAR99 Estimated EOL Date: 2028 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ3418AEEV-T1_GE3 - 763346-SQ3418AEEV-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ3418AEEV-T1_GE3
763346-SQ3418AEEV-T1_GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ3418AEEV-T1_GE3 763346-SQ3418AEEV-T1_GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 763346-SQ3418AEEV-T1 _GE3 Series: TrenchFET Operating Temperature Range: -55°C ~ 175°C (TJ) Package: SOT-23-6 Thin, TSOT-23-6 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Family Name: SQ3418AEEV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: 6-TSOP Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 370pF @ 15V Vgs (Maximum): ±20V Power Dissipation (Maximum): 4W (Tc) Rds On (Maximum) @ Id, Vgs: 35 mOhm @ 6A, 10V ECCN: EAR99 Estimated EOL Date: 2028 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 763346-SQ3418AEEV-T1_GE3
Series: TrenchFET
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: SOT-23-6 Thin, TSOT-23-6
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Family Name: SQ3418AEEV
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 6-TSOP
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 370pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 4W (Tc)
Rds On (Maximum) @ Id, Vgs: 35 mOhm @ 6A, 10V
ECCN: EAR99
Estimated EOL Date: 2028
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SQ3418AEEV-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQ3418AEEV-T1_GE3
Single FETs, MOSFETs SQ3418AEEV-T1_GE3
MOSFET N-CHANNEL 30V 7.8A 6TSOP

MOSFET N-CHANNEL 30V 7.8A 6TSOP

Supplier's Site
MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified

MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQ3418AEEV-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQ3418AEEV-T1_GE3
MOSFET N-CHANNEL 30V 7.8A 6TSOP

MOSFET N-CHANNEL 30V 7.8A 6TSOP

Supplier's Site
Mosfet, N-Ch, 40V, 8A, Tsop Rohs Compliant Vishay - 57AJ0725 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 8A, Tsop Rohs Compliant Vishay
57AJ0725
Mosfet, N-Ch, 40V, 8A, Tsop Rohs Compliant Vishay 57AJ0725
MOSFET, N-CH, 40V, 8A, TSOP ROHS COMPLIANT: YES

MOSFET, N-CH, 40V, 8A, TSOP ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 763346-SQ3418AEEV-T1_GE3 SQ3418AEEV-T1_GE3 SQ3418AEEV-T1_GE3 SQ3418AEEV-T1_GE3 57AJ0725
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ3418AEEV-T1_GE3 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 40V, 8A, Tsop Rohs Compliant Vishay
PD 4000 milliwatts 5000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; SOT23 SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3
Polarity N-Channel; N-Channel
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