Vishay Precision Group Single FETs, MOSFETs SQ3418AEEV-T1_GE3

Description
MOSFET N-CHANNEL 30V 7.8A 6TSOP
Request a Quote Datasheet
Description
MOSFET N-CHANNEL 30V 7.8A 6TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SQ3418AEEV-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQ3418AEEV-T1_GE3
Single FETs, MOSFETs SQ3418AEEV-T1_GE3
MOSFET N-CHANNEL 30V 7.8A 6TSOP

MOSFET N-CHANNEL 30V 7.8A 6TSOP

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ3418AEEV-T1_GE3 - 763346-SQ3418AEEV-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ3418AEEV-T1_GE3
763346-SQ3418AEEV-T1_GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ3418AEEV-T1_GE3 763346-SQ3418AEEV-T1_GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 763346-SQ3418AEEV-T1 _GE3 Series: TrenchFET Operating Temperature Range: -55°C ~ 175°C (TJ) Package: SOT-23-6 Thin, TSOT-23-6 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Family Name: SQ3418AEEV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: 6-TSOP Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 370pF @ 15V Vgs (Maximum): ±20V Power Dissipation (Maximum): 4W (Tc) Rds On (Maximum) @ Id, Vgs: 35 mOhm @ 6A, 10V ECCN: EAR99 Estimated EOL Date: 2028 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 763346-SQ3418AEEV-T1_GE3
Series: TrenchFET
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: SOT-23-6 Thin, TSOT-23-6
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Family Name: SQ3418AEEV
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 6-TSOP
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 370pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 4W (Tc)
Rds On (Maximum) @ Id, Vgs: 35 mOhm @ 6A, 10V
ECCN: EAR99
Estimated EOL Date: 2028
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified

MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified

Buy Now Datasheet
Mosfet, N-Ch, 40V, 8A, Tsop Rohs Compliant Vishay - 57AJ0725 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 8A, Tsop Rohs Compliant Vishay
57AJ0725
Mosfet, N-Ch, 40V, 8A, Tsop Rohs Compliant Vishay 57AJ0725
MOSFET, N-CH, 40V, 8A, TSOP ROHS COMPLIANT: YES

MOSFET, N-CH, 40V, 8A, TSOP ROHS COMPLIANT: YES

Supplier's Site
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQ3418AEEV-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQ3418AEEV-T1_GE3
MOSFET N-CHANNEL 30V 7.8A 6TSOP

MOSFET N-CHANNEL 30V 7.8A 6TSOP

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SQ3418AEEV-T1_GE3 763346-SQ3418AEEV-T1_GE3 SQ3418AEEV-T1_GE3 57AJ0725 SQ3418AEEV-T1_GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ3418AEEV-T1_GE3 MOSFET Mosfet, N-Ch, 40V, 8A, Tsop Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts
IDSS 8000 milliamps
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