MOSFET N-CH 40V 8A 6TSOP
MOSFET N-CH 40V 8A 6TSOP Product overview: SQ3418AEEV-T1_BE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ3418AEEV-T1_BE
N-Channel 40V 8A (Tc) 5W (Tc) Surface Mount 6-TSOP
N-Channel 40V 8A (Tc) 5W (Tc) Surface Mount 6-TSOP
N-Channel 40V 8A (Tc) 5W (Tc) Surface Mount 6-TSOP
Win Source Part Number: 978424-SQ3418AEEV-T1
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SQ3418AEEV-T1_BE
Base Product Number: SQ3418
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 40V 8A 6TSOP
MOSFET, N-CH, 40V, 8A, TSOP; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; No. of Pins:6Pins RoHS Compliant: Yes
MOSFET, N-CH, 40V, 8A, TSOP; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; No. of Pins:6Pins RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQ3418AEEV-T1_BE3 | 278-SQ3418AEEV-T1_BE3 | 742-SQ3418AEEV-T1_BE3TR-ND | 978424-SQ3418AEEV-T1_BE3 | SQ3418AEEV-T1_BE3 | 80AH8971 |
| Product Name | Single FETs, MOSFETs | 40V 8A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 40V, 8A, Tsop; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 40 volts | |||||
| IDSS | 8000 milliamps | 8000 milliamps | ||||
| PD | 5000 milliwatts | 5 milliwatts | 5000 milliwatts |
