Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Product overview: SQ2398ES-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1.6A, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.6A, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ2398ES-T1_GE3 can be used for catalog matching and distributor lookup.
N-Channel 100V 1.6A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
N-Channel 100V 1.6A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
N-Channel 100V 1.6A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
Manufacturer: Vishay Siliconix
Win Source Part Number: 716383-SQ2398ES-T1_G
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Maximum): 2W
Popularity: Low
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 1.6A
Rds On (Maximum) at Id, Vgs: 300mOhm at 1.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 3.4nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 152pF at 50V
MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
MOSFET N-CH 100V 1.6A SOT23-3
MOSFET, N-CH, 100V, 1.67A, 175DEG C, 2W ROHS COMPLIANT: YES
MOSFET N-CH 100V 1.6A SOT23-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SQ2398ES-T1_GE3 | SQ2398ES-T1_GE3CT-ND | 716383-SQ2398ES-T1_GE3 | SQ2398ES-T1_GE3 | SQ2398ES-T1_GE3 | 75AH9246 | SQ2398ES-T1_GE3 |
| Product Name | N-Channel 1.6A 100V MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - SQ2398ES-T1_GE3 | MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 1.67A, 175Deg C, 2W Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | ||
| Transistor Grade / Operating Range | Automotive | ||||||
| V(BR)DSS | 100 volts | 100 volts |
