MOSFET P-CH 40V 4.1A SOT23-3
P-Channel 40V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 40V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 40V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
Small Signal Field-Effect Transistor, 4.1A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Product overview: SQ2389ES-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 4.1A, 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4.1A, 40V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ2389ES-T1_GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 844238-SQ2389ES-T1_G
Series: Automotive, AEC-Q101, TrenchFET®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: P-Channel 40 V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
Package: TO-236-3, SC-59, SOT-23-3
Package: Reel - TR
Mounting: Surface Mount
Family Name: SQ2389
Categories: Discrete Semiconductor Products
Case / Package: SOT-23-3 (TO-236)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQ2389ES-T1_GE3DKR, SQ2389ES-T1_GE3CT, SQ2389ES-T1_GE3TR
MOSFET P-CH 40V 4.1A SOT23-3
MOSFET, AEC-Q101, N-CH, -40, -4.1A, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:-40V; Continuous Drain Current Id:-4.1A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2V; Power Dissipation:3W RoHS Compliant: Yes
MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified
40V 4.1A 94mΩ@10V,10A 3W 2.5V@250uA P Channel SOT-23 MOSFETs ROHS
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQ2389ES-T1_GE3 | SQ2389ES-T1_GE3CT-ND | 278-SQ2389ES-T1_GE3 | 844238-SQ2389ES-T1_GE3 | SQ2389ES-T1_GE3 | 96Y9640 | SQ2389ES-T1_GE3 | SQ2389ES-T1_GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | P-Channel 4.1A 40V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ2389ES-T1_GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, -40, -4.1A, Sot23; Channel Type Vishay | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 40 volts | 40 volts | ||||||
| IDSS | 4100 milliamps | -4100 milliamps | ||||||
| PD | 3000 milliwatts | 3000 milliwatts | 3000 milliwatts |
