Vishay Precision Group Single FETs, MOSFETs SQ2389ES-T1_GE3

Description
MOSFET P-CH 40V 4.1A SOT23-3
Request a Quote Datasheet
Description
MOSFET P-CH 40V 4.1A SOT23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SQ2389ES-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQ2389ES-T1_GE3
Single FETs, MOSFETs SQ2389ES-T1_GE3
MOSFET P-CH 40V 4.1A SOT23-3

MOSFET P-CH 40V 4.1A SOT23-3

Supplier's Site Datasheet
Singapore
P-Channel 4.1A 40V MOSFET Transistor
278-SQ2389ES-T1_GE3
P-Channel 4.1A 40V MOSFET Transistor 278-SQ2389ES-T1_GE3
Small Signal Field-Effect Transistor, 4.1A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Product overview: SQ2389ES-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 4.1A, 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4.1A, 40V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ2389ES-T1_GE3 can be used for catalog matching and distributor lookup.

Small Signal Field-Effect Transistor, 4.1A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Product overview: SQ2389ES-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 4.1A, 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4.1A, 40V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ2389ES-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ2389ES-T1_GE3 - 844238-SQ2389ES-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ2389ES-T1_GE3
844238-SQ2389ES-T1_GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ2389ES-T1_GE3 844238-SQ2389ES-T1_GE3
Manufacturer: Vishay Win Source Part Number: 844238-SQ2389ES-T1_G E3 Series: Automotive, AEC-Q101, TrenchFET® Operating Temperature Range: -55°C ~ 175°C (TJ) Features: P-Channel 40 V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236) Package: TO-236-3, SC-59, SOT-23-3 Package: Reel - TR Mounting: Surface Mount Family Name: SQ2389 Categories: Discrete Semiconductor Products Case / Package: SOT-23-3 (TO-236) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks HTSUS: 8541.29.0095 Other Part Number: SQ2389ES-T1_GE3DKR, SQ2389ES-T1_GE3CT, SQ2389ES-T1_GE3TR

Manufacturer: Vishay
Win Source Part Number: 844238-SQ2389ES-T1_GE3
Series: Automotive, AEC-Q101, TrenchFET®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: P-Channel 40 V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
Package: TO-236-3, SC-59, SOT-23-3
Package: Reel - TR
Mounting: Surface Mount
Family Name: SQ2389
Categories: Discrete Semiconductor Products
Case / Package: SOT-23-3 (TO-236)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQ2389ES-T1_GE3DKR, SQ2389ES-T1_GE3CT, SQ2389ES-T1_GE3TR

Buy Now Datasheet
Single FETs, MOSFETs - SQ2389ES-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ2389ES-T1_GE3CT-ND
Single FETs, MOSFETs SQ2389ES-T1_GE3CT-ND
P-Channel 40V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 40V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SQ2389ES-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ2389ES-T1_GE3TR-ND
Single FETs, MOSFETs SQ2389ES-T1_GE3TR-ND
P-Channel 40V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 40V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SQ2389ES-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ2389ES-T1_GE3DKR-ND
Single FETs, MOSFETs SQ2389ES-T1_GE3DKR-ND
P-Channel 40V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 40V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Mosfet, Aec-Q101, N-Ch, -40, -4.1A, Sot23; Channel Type Vishay - 96Y9640 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, -40, -4.1A, Sot23; Channel Type Vishay
96Y9640
Mosfet, Aec-Q101, N-Ch, -40, -4.1A, Sot23; Channel Type Vishay 96Y9640
MOSFET, AEC-Q101, N-CH, -40, -4.1A, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:-40V; Continuous Drain Current Id:-4.1A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2V; Power Dissipation:3W RoHS Compliant: Yes

MOSFET, AEC-Q101, N-CH, -40, -4.1A, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:-40V; Continuous Drain Current Id:-4.1A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2V; Power Dissipation:3W RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQ2389ES-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQ2389ES-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQ2389ES-T1_GE3
MOSFET P-CH 40V 4.1A SOT23-3

MOSFET P-CH 40V 4.1A SOT23-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified

MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SQ2389ES-T1_GE3
Triode/MOS Tube/Transistor >> MOSFETs SQ2389ES-T1_GE3
40V 4.1A 94mΩ@10V,10A 3W 2.5V@250uA P Channel SOT-23 MOSFETs ROHS

40V 4.1A 94mΩ@10V,10A 3W 2.5V@250uA P Channel SOT-23 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SQ2389ES-T1_GE3 278-SQ2389ES-T1_GE3 844238-SQ2389ES-T1_GE3 SQ2389ES-T1_GE3CT-ND 96Y9640 SQ2389ES-T1_GE3 SQ2389ES-T1_GE3 SQ2389ES-T1_GE3
Product Name Single FETs, MOSFETs P-Channel 4.1A 40V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ2389ES-T1_GE3 Single FETs, MOSFETs Mosfet, Aec-Q101, N-Ch, -40, -4.1A, Sot23; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Triode/MOS Tube/Transistor >> MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts 40 volts
IDSS 4100 milliamps -4100 milliamps
PD 3000 milliwatts 3000 milliwatts 3000 milliwatts
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