Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SQ2364EES-T1_GE3

Description
Win Source Part Number: 978423-SQ2364EES-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 3W (Tc) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQ2364EES-T1_GE3CT,S Q2364EES-T1_GE3TR,SQ 2364EES-T1_GE3DKR Base Product Number: SQ2364 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
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Description
Win Source Part Number: 978423-SQ2364EES-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 3W (Tc) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQ2364EES-T1_GE3CT,S Q2364EES-T1_GE3TR,SQ 2364EES-T1_GE3DKR Base Product Number: SQ2364 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 978423-SQ2364EES-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
978423-SQ2364EES-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 978423-SQ2364EES-T1_GE3
Win Source Part Number: 978423-SQ2364EES-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 3W (Tc) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQ2364EES-T1_GE3CT,S Q2364EES-T1_GE3TR,SQ 2364EES-T1_GE3DKR Base Product Number: SQ2364 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V

Win Source Part Number: 978423-SQ2364EES-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3W (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQ2364EES-T1_GE3CT,SQ2364EES-T1_GE3TR,SQ2364EES-T1_GE3DKR
Base Product Number: SQ2364
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V

Buy Now Datasheet
Singapore
Automotive 60V 2A SOT-23 MOSFET Transistor
278-SQ2364EES-T1_GE3
Automotive 60V 2A SOT-23 MOSFET Transistor 278-SQ2364EES-T1_GE3
Trans MOSFET N-CH 60V 2A Automotive AEC-Q101 3-Pin SOT-23 T/R Product overview: SQ2364EES-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 2A, SOT-23, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ2364EES-T1_GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 60V 2A Automotive AEC-Q101 3-Pin SOT-23 T/R Product overview: SQ2364EES-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 2A, SOT-23, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ2364EES-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SQ2364EES-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ2364EES-T1_GE3DKR-ND
Single FETs, MOSFETs SQ2364EES-T1_GE3DKR-ND
N-Channel 60V 2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 60V 2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SQ2364EES-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ2364EES-T1_GE3TR-ND
Single FETs, MOSFETs SQ2364EES-T1_GE3TR-ND
N-Channel 60V 2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 60V 2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SQ2364EES-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ2364EES-T1_GE3CT-ND
Single FETs, MOSFETs SQ2364EES-T1_GE3CT-ND
N-Channel 60V 2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 60V 2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SQ2364EES-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQ2364EES-T1_GE3
Single FETs, MOSFETs SQ2364EES-T1_GE3
MOSFET N-CH 60V 2A SOT23-3

MOSFET N-CH 60V 2A SOT23-3

Supplier's Site Datasheet
MOSFETs - 1783708 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1783708
MOSFETs 1783708
Automotive N-Channel 60 V (D-S)175C MOS

Automotive N-Channel 60 V (D-S)175C MOS

Supplier's Site
MOSFETs - 1783877P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1783877P
MOSFETs 1783877P
Automotive N-Channel 60 V (D-S)175C MOS

Automotive N-Channel 60 V (D-S)175C MOS

Supplier's Site
MOSFETs - 1783877 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1783877
MOSFETs 1783877
Automotive N-Channel 60 V (D-S)175C MOS

Automotive N-Channel 60 V (D-S)175C MOS

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQ2364EES-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQ2364EES-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQ2364EES-T1_GE3
MOSFET N-CH 60V 2A SOT23-3

MOSFET N-CH 60V 2A SOT23-3

Supplier's Site
Mosfet, N-Ch, 60V, 2A, 175Deg C, 3W; Channel Type Vishay - 59AC7678 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 2A, 175Deg C, 3W; Channel Type Vishay
59AC7678
Mosfet, N-Ch, 60V, 2A, 175Deg C, 3W; Channel Type Vishay 59AC7678
MOSFET, N-CH, 60V, 2A, 175DEG C, 3W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2A; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:3W; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, N-CH, 60V, 2A, 175DEG C, 3W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2A; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:3W; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site Datasheet
N-Channel 60-V (D-S) 175C Mosfet Vishay - 26AK9938 - Newark, An Avnet Company
Chicago, IL, United States
N-Channel 60-V (D-S) 175C Mosfet Vishay
26AK9938
N-Channel 60-V (D-S) 175C Mosfet Vishay 26AK9938
N-CHANNEL 60-V (D-S) 175C MOSFET

N-CHANNEL 60-V (D-S) 175C MOSFET

Supplier's Site
MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id

MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) RS Components, Ltd. RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 978423-SQ2364EES-T1_GE3 278-SQ2364EES-T1_GE3 SQ2364EES-T1_GE3DKR-ND SQ2364EES-T1_GE3 1783708 1783877P SQ2364EES-T1_GE3 59AC7678 26AK9938 SQ2364EES-T1_GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Automotive 60V 2A SOT-23 MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 60V, 2A, 175Deg C, 3W; Channel Type Vishay N-Channel 60-V (D-S) 175C Mosfet Vishay MOSFET
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
PD 3000 milliwatts 3 milliwatts 3000 milliwatts 3000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; SOT23 Tape and Reel SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; Sot-23 SOT23; SOT-23 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 TO-3
MOSFET Operating Mode Enhancement Enhancement
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