MOSFET N-CH 60V 2A SOT23-3
Win Source Part Number: 978423-SQ2364EES-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3W (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQ2364EES-T1_GE3CT,S
Base Product Number: SQ2364
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Automotive N-Channel 60 V (D-S)175C MOS
Automotive N-Channel 60 V (D-S)175C MOS
Automotive N-Channel 60 V (D-S)175C MOS
Trans MOSFET N-CH 60V 2A Automotive AEC-Q101 3-Pin SOT-23 T/R Product overview: SQ2364EES-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 2A, SOT-23, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ2364EES-T1_GE3
N-Channel 60V 2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
N-Channel 60V 2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
N-Channel 60V 2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id
MOSFET, N-CH, 60V, 2A, 175DEG C, 3W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2A; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:3W; No. of Pins:3Pins RoHS Compliant: Yes
N-CHANNEL 60-V (D-S) 175C MOSFET
MOSFET N-CH 60V 2A SOT23-3
| ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SQ2364EES-T1_GE3 | 978423-SQ2364EES-T1_GE3 | 1783708 | 1783877P | 278-SQ2364EES-T1_GE3 | SQ2364EES-T1_GE3DKR-ND | SQ2364EES-T1_GE3 | 59AC7678 | 26AK9938 | SQ2364EES-T1_GE3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | MOSFETs | Automotive 60V 2A SOT-23 MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 2A, 175Deg C, 3W; Channel Type Vishay | N-Channel 60-V (D-S) 175C Mosfet Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||||
| IDSS | 2000 milliamps | 2000 milliamps | ||||||||
| PD | 3000 milliwatts | 3000 milliwatts | 3 milliwatts | 3000 milliwatts |
