Vishay Precision Group Single FETs, MOSFETs SQ2361ES-T1_GE3

Description
P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount
Request a Quote Datasheet
Description
P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SQ2361ES-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ2361ES-T1_GE3TR-ND
Single FETs, MOSFETs SQ2361ES-T1_GE3TR-ND
P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount

P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount

Buy Now Datasheet
Single FETs, MOSFETs - SQ2361ES-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQ2361ES-T1_GE3CT-ND
Single FETs, MOSFETs SQ2361ES-T1_GE3CT-ND
P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount

P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount

Buy Now Datasheet
MOSFETs - 1526376 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1526376
MOSFETs 1526376
AQ101 P-channel MOSFET 60V 2.8A SOT-23

AQ101 P-channel MOSFET 60V 2.8A SOT-23

Supplier's Site
MOSFETs - 1464445 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1464445
MOSFETs 1464445
AQ101 P-channel MOSFET 60V 2.8A SOT-23

AQ101 P-channel MOSFET 60V 2.8A SOT-23

Supplier's Site
MOSFETs - 1526376P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1526376P
MOSFETs 1526376P
AQ101 P-channel MOSFET 60V 2.8A SOT-23

AQ101 P-channel MOSFET 60V 2.8A SOT-23

Supplier's Site
Singapore
P-Channel 2.8A 60V MOSFET Transistor
278-SQ2361ES-T1_GE3
P-Channel 2.8A 60V MOSFET Transistor 278-SQ2361ES-T1_GE3
Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SQ2361ES-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 2.8A, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2.8A, 60V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ2361ES-T1_GE3 can be used for catalog matching and distributor lookup.

Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SQ2361ES-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 2.8A, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2.8A, 60V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ2361ES-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SQ2361ES-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQ2361ES-T1_GE3
Single FETs, MOSFETs SQ2361ES-T1_GE3
MOSFET P-CH 60V 2.8A SSOT23

MOSFET P-CH 60V 2.8A SSOT23

Supplier's Site Datasheet
Mosfet, P-Ch, 60V, 2.8A, 175Deg C, 2W; Channel Type Vishay - 61AC2042 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 60V, 2.8A, 175Deg C, 2W; Channel Type Vishay
61AC2042
Mosfet, P-Ch, 60V, 2.8A, 175Deg C, 2W; Channel Type Vishay 61AC2042
MOSFET, P-CH, 60V, 2.8A, 175DEG C, 2W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.8A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:2W; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, P-CH, 60V, 2.8A, 175DEG C, 2W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.8A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:2W; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQ2361ES-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQ2361ES-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQ2361ES-T1_GE3
MOSFET P-CH 60V 2.8A SSOT23

MOSFET P-CH 60V 2.8A SSOT23

Supplier's Site
Sheung Wan, Hong Kong
MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified

MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified

Buy Now Datasheet

Technical Specifications

  DigiKey RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SQ2361ES-T1_GE3TR-ND 1526376 1526376P 278-SQ2361ES-T1_GE3 SQ2361ES-T1_GE3 61AC2042 SQ2361ES-T1_GE3 SQ2361ES-T1_GE3
Product Name Single FETs, MOSFETs MOSFETs MOSFETs P-Channel 2.8A 60V MOSFET Transistor Single FETs, MOSFETs Mosfet, P-Ch, 60V, 2.8A, 175Deg C, 2W; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel P-Channel P-Channel; P-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; Sot-23 SOT23; SOT-23 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 Surface Mount
Transistor Grade / Operating Range Automotive
MOSFET Operating Mode Enhancement
Number of units in IC 1
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