The Vishay P-Channel MOSFET (part number 80AH8968) is designed for automotive applications, featuring a maximum drain-source voltage of -60V and a continuous drain current rating of -2.8A. It has a low on-state resistance of 0.177Oc at a gate-source voltage of -10V and 0.246Oc at -4.5V, which contributes to efficient power management. The device is housed in a compact SOT-23 package and is AEC-Q101 qualified, ensuring reliability in automotive environments. It operates within a temperature range of -55¬8C to +175¬8C and is both lead-free and halogen-free, complying with RoHS standards. The MOSFET is suitable for applications requiring robust performance and thermal management, with a maximum power dissipation of 2W at 25¬8C.
P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET P-CH 60V 2.8A SOT23-3 Product overview: SQ2361ES-T1_BE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 2.8A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2.8A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ2361ES-T1_BE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 970292-SQ2361ES-T1_B
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SQ2361ES-T1_BE3C
Base Product Number: SQ2361
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET P-CH 60V 2.8A SOT23-3
MOSFET, P-CH, 60V, 2.8A, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET, P-CH, 60V, 2.8A, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET P-CH 60V 2.8A SOT23-3
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 742-SQ2361ES-T1_BE3CT-ND | 278-SQ2361ES-T1_BE3 | 970292-SQ2361ES-T1_BE3 | SQ2361ES-T1_BE3 | 78AH6686 | SQ2361ES-T1_BE3 |
| Product Name | Single FETs, MOSFETs | 60V 2.8A SOT23 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, P-Ch, 60V, 2.8A, Sot-23; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | SOT3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT23 | Surface Mount |
| Transistor Grade / Operating Range | Automotive | |||||
| MOSFET Operating Mode | Enhancement | |||||
| PD | 2 milliwatts | 2000 milliwatts | 2000 milliwatts |
