Vishay Intertechnology, Inc. Single FETs, MOSFETs SQ2361AEES-T1_GE3

P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount

P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount

MOSFET P-CH 60V 2.8A SSOT23 Product overview: SQ2361AEES-T1_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 2.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ2361AEES-T1_GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 712301-SQ2361AEES-T1_GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Maximum): 2W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 2.8A
Rds On (Maximum) at Id, Vgs: 170mOhm at 2.4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 15nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 620pF at 30V