Power Field-Effect Transistor, 3.2A I(D), 20V, 0.168ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SQ2351ES-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 3.2A, 20V, 0.168ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3.2A, 20V, 0.168ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ2351ES-T1_GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1101698-SQ2351ES-T1_
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.2A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 5.5nC @ 4.5V
Max Input Capacitance: 330pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 115 mOhm @ 2.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
P-Channel 20V 3.2A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 3.2A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 3.2A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET P-CH 20V 3.2A SOT23-3
MOSFET P-CH 20V 3.2A SOT23-3
MOSFET, P-CH, 20V, 3.2A, 175DEG C, 2W ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQ2351ES-T1_GE3 | 1101698-SQ2351ES-T1_GE3 | SQ2351ES-T1_GE3TR-ND | SQ2351ES-T1_GE3 | SQ2351ES-T1_GE3 | 75AH9245 |
| Product Name | P-Channel 3.2A 20V 0.168ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ2351ES-T1_GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, 20V, 3.2A, 175Deg C, 2W Rohs Compliant Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | ||||
| PD | 2000 milliwatts | 2000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 |
