MOSFET P-CH 80V 2.2A SOT23-3
Trans MOSFET P-CH 80V 2.2A 3-Pin SOT-23 T/R Automotive AEC-Q101 Product overview: SQ2337ES-T1_BE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 80V, 2.2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 80V, 2.2A, SOT-23, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ2337ES-T1_BE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1277789-SQ2337ES-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SQ2337ES-T1_BE3D
Base Product Number: SQ2337
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
P-Channel 80V 2.2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 80V 2.2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 80V 2.2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET P-CH 80V 2.2A SOT23-3
MOSFET, P-CH, 80V, 2.2A, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET, P-CH, 80V, 2.2A, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQ2337ES-T1_BE3 | 278-SQ2337ES-T1_BE3 | 1277789-SQ2337ES-T1_BE3 | 742-SQ2337ES-T1_BE3CT-ND | SQ2337ES-T1_BE3 | 80AH8965 |
| Product Name | Single FETs, MOSFETs | Automotive 80V 2.2A SOT-23 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 80V, 2.2A, Sot-23; Channel Type Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 80 volts | 80 volts | ||||
| IDSS | 2200 milliamps | 2200 milliamps | ||||
| PD | 3000 milliwatts | 3000 milliwatts |
