MOSFET N-CH 60V 2.3A SOT23
AEQC101 Qualified N-CHANNEL 60-V (D-S) 1
AEQC101 Qualified N-CHANNEL 60-V (D-S) 1
AEQC101 Qualified N-CHANNEL 60-V (D-S) 1
Manufacturer: Vishay
Win Source Part Number: 1101693-SQ2308CES-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: SOT-23 (TO-236AB)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.3A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 5.3nC @ 10V
Max Input Capacitance: 205pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 150 mOhm @ 2.3A, 10V
Alternative Parts (Cross-Reference): RSR030N06TL; RSR030N06FRATL; DMN6140LQ-13;
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
N-Channel 60V 2.3A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
N-Channel 60V 2.3A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
N-Channel 60V 2.3A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET N-CH 60V 2.3A SOT23
MOSFET, AEC-Q101, N-CH, 60V, 2.3A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.3A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:3.3W RoHS Compliant: Yes
MOSFET 60V 2.3A 2watt AEC-Q101 Qualified
| ODG (Origin Data Global) | RS Components, Ltd. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQ2308CES-T1_GE3 | 1807943 | 1101693-SQ2308CES-T1_GE3 | SQ2308CES-T1_GE3TR-ND | SQ2308CES-T1_GE3 | 96Y9635 | SQ2308CES-T1_GE3 |
| Product Name | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ2308CES-T1_GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 60V, 2.3A, Sot-23; Channel Type Vishay | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 2300 milliamps | 2300 milliamps | |||||
| PD | 2000 milliwatts | 2000 milliwatts | 3300 milliwatts |
