Vishay Intertechnology, Inc. P-Channel 2.5A 30V MOSFET Transistor SQ2303ES-T1_GE3

Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SQ2303ES-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 2.5A, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2.5A, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ2303ES-T1_GE3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 2.5A TO236

Manufacturer: Vishay
Win Source Part Number: 1101692-SQ2303ES-T1_GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.9W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-236 (SOT-23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.5A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 6.8nC @ 10V
Max Input Capacitance: 210pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 170 mOhm @ 1.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

P-Channel 30V 2.5A (Tc) 1.9W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 30V 2.5A (Tc) 1.9W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 30V 2.5A (Tc) 1.9W (Tc) Surface Mount SOT-23-3 (TO-236)