Vishay Intertechnology, Inc. MOSFET Transistor SQ1912EH-T1_GE3

Small Signal Field-Effect Transistor, Product overview: SQ1912EH-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ1912EH-T1_GE3 can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) 20V 800mA (Tc) 1.5W Surface Mount SC-70-6

Mosfet Array 2 N-Channel (Dual) 20V 800mA (Tc) 1.5W Surface Mount SC-70-6

Mosfet Array 2 N-Channel (Dual) 20V 800mA (Tc) 1.5W Surface Mount SC-70-6

Win Source Part Number: 1278520-SQ1912EH-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power - Max: 1.5W
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQ1912EH-T1_GE3DKR,SQ1912EH-T1_GE3CT,SQ1912EH-T1_GE3TR
Base Product Number: SQ1912