Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ1470EH-T1-GE3 SQ1470EH-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1101690-SQ1470EH-T1- GE3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 6.6nC @ 4.5V Max Input Capacitance: 610pF @ 25V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 65 mOhm @ 3.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1101690-SQ1470EH-T1- GE3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 6.6nC @ 4.5V Max Input Capacitance: 610pF @ 25V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 65 mOhm @ 3.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ1470EH-T1-GE3 - 1101690-SQ1470EH-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ1470EH-T1-GE3
1101690-SQ1470EH-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ1470EH-T1-GE3 1101690-SQ1470EH-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1101690-SQ1470EH-T1- GE3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 6.6nC @ 4.5V Max Input Capacitance: 610pF @ 25V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 65 mOhm @ 3.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1101690-SQ1470EH-T1-GE3
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.8A (Tc)
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 6.6nC @ 4.5V
Max Input Capacitance: 610pF @ 25V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 65 mOhm @ 3.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQ1470EH-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQ1470EH-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQ1470EH-T1-GE3
MOSFET N-CH 30V 2.8A SC70

MOSFET N-CH 30V 2.8A SC70

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1101690-SQ1470EH-T1-GE3 SQ1470EH-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ1470EH-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 3300 milliwatts
Unlock Full Specs
to access all available technical data