Win Source Part Number: 1114260-SQ1421EDH-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Tc)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SQ1421EDH-T1-GE3; SQ1421EDH-T1/GE3; SQ1421EDHT1GE3;
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQ1421EEH-T1-GE3,SQ1
Base Product Number: SQ1421
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
P-Channel 60V 1.6A (Tc) 3.3W (Tc) Surface Mount SC-70-6
P-Channel 60V 1.6A (Tc) 3.3W (Tc) Surface Mount SC-70-6
P-Channel 60V 1.6A (Tc) 3.3W (Tc) Surface Mount SC-70-6
Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Product overview: SQ1421EDH-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 1.6A, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.6A, 60V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ1421EDH-T1_GE3
MOSFET 60V (D-S) -/+20V AEC-Q101 Qualified
MOSFET, AEC-Q101, P-CH, -60V, -1.6A, SC70; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-1.6A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2V; Power Dissipation:3.3W RoHS Compliant: Yes
MOSFET P-CH 60V 1.6A SC70-6
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1114260-SQ1421EDH-T1_GE3 | SQ1421EDH-T1_GE3TR-ND | 278-SQ1421EDH-T1_GE3 | SQ1421EDH-T1_GE3 | 96Y9634 | SQ1421EDH-T1_GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | P-Channel 1.6A 60V MOSFET Transistor | MOSFET | Mosfet, Aec-Q101, P-Ch, -60V, -1.6A, Sc70; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | ||||
| PD | 3300 milliwatts | 3300 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | SOT3 | 6-TSSOP, SC-88, SOT-363 | TO-3 | Surface Mount |
