Vishay Intertechnology, Inc. FETs - Arrays - SIZF906DT-T1-GE3 SIZF906DT-T1-GE3

Manufacturer: Vishay Siliconix
Win Source Part Number: 811134-SIZF906DT-T1-GE3
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Power - Max: 38W (Tc), 83W (Tc)
Supplier Device Package: 8-PowerPair (6x5)
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerWDFN
Popularity: Medium
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 3.8mOhm at 15A, 10V, 1.17mOhm at 20A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 22nC at 4.5V, 92nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 2000pF at 15V, 8200pF at 15V
Current - Continuous Drain (Id) at 25°C: 60A (Tc)
Vgs(th) (Maximum) at Id: 2.2V at 250μA

Power Field-Effect Transistor, 60A I(D), 30V, 0.0038ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Product overview: SIZF906DT-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60A, 30V, 0.0038ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60A, 30V, 0.0038ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIZF906DT-T1-GE3 can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Half Bridge) 30V 60A (Tc) 38W (Tc), 83W (Tc) Surface Mount 8-PowerPair® (6x5)

Mosfet Array 2 N-Channel (Half Bridge) 30V 60A (Tc) 38W (Tc), 83W (Tc) Surface Mount 8-PowerPair® (6x5)