Vishay Precision Group FET, MOSFET Arrays SIZF360DT-T1-GE3

Mosfet Array 2 N-Channel (Dual), Schottky 30V 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc) 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc) Surface Mount 6-PowerPair™

Mosfet Array 2 N-Channel (Dual), Schottky 30V 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc) 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc) Surface Mount 6-PowerPair™

Mosfet Array 2 N-Channel (Dual), Schottky 30V 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc) 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc) Surface Mount 6-PowerPair™

Win Source Part Number: 1278508-SIZF360DT-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIZF360DT-T1-GE3DKR,742-SIZF360DT-T1-GE3TR,742-SIZF360DT-T1-GE3CT
Base Product Number: SIZF360