Vishay Precision Group FETs - Arrays - SIZ998DT-T1-GE3 SIZ998DT-T1-GE3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 734397-SIZ998DT-T1-G E3 Packaging: Reel Mounting Style: SMD FET Feature: Standard Transistor Polarity: 2 N-Channel (Dual), Schottky Categories: Discrete Semiconductor Products Supplier Device Package: 8-PowerPair Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerWDFN Popularity: Low Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Maximum Power: 20.2W, 32.9W Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 20A, 60A Rds On (Maximum) at Id, Vgs: 6.7mOhm at 15A, 10V, 2.8mOhm at 19A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.1nC at 4.5V, 19.8nC at 4.5V Input Capacitance (Ciss) (Maximum) at Vds: 930pF at 15V, 2620pF at 15V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 734397-SIZ998DT-T1-G E3 Packaging: Reel Mounting Style: SMD FET Feature: Standard Transistor Polarity: 2 N-Channel (Dual), Schottky Categories: Discrete Semiconductor Products Supplier Device Package: 8-PowerPair Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerWDFN Popularity: Low Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Maximum Power: 20.2W, 32.9W Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 20A, 60A Rds On (Maximum) at Id, Vgs: 6.7mOhm at 15A, 10V, 2.8mOhm at 19A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.1nC at 4.5V, 19.8nC at 4.5V Input Capacitance (Ciss) (Maximum) at Vds: 930pF at 15V, 2620pF at 15V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Arrays - SIZ998DT-T1-GE3 - 734397-SIZ998DT-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Arrays - SIZ998DT-T1-GE3
734397-SIZ998DT-T1-GE3
FETs - Arrays - SIZ998DT-T1-GE3 734397-SIZ998DT-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 734397-SIZ998DT-T1-G E3 Packaging: Reel Mounting Style: SMD FET Feature: Standard Transistor Polarity: 2 N-Channel (Dual), Schottky Categories: Discrete Semiconductor Products Supplier Device Package: 8-PowerPair Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerWDFN Popularity: Low Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Maximum Power: 20.2W, 32.9W Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 20A, 60A Rds On (Maximum) at Id, Vgs: 6.7mOhm at 15A, 10V, 2.8mOhm at 19A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.1nC at 4.5V, 19.8nC at 4.5V Input Capacitance (Ciss) (Maximum) at Vds: 930pF at 15V, 2620pF at 15V

Manufacturer: Vishay Siliconix
Win Source Part Number: 734397-SIZ998DT-T1-GE3
Packaging: Reel
Mounting Style: SMD
FET Feature: Standard
Transistor Polarity: 2 N-Channel (Dual), Schottky
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-PowerPair
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerWDFN
Popularity: Low
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Maximum Power: 20.2W, 32.9W
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 20A, 60A
Rds On (Maximum) at Id, Vgs: 6.7mOhm at 15A, 10V, 2.8mOhm at 19A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8.1nC at 4.5V, 19.8nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 930pF at 15V, 2620pF at 15V

Buy Now
Singapore, Singapore
30V 20A 60A MOSFET Transistor
278-SIZ998DT-T1-GE3
30V 20A 60A MOSFET Transistor 278-SIZ998DT-T1-GE3
Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R Product overview: SIZ998DT-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20A, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20A, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIZ998DT-T1-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R Product overview: SIZ998DT-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20A, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20A, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIZ998DT-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - SIZ998DT-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIZ998DT-T1-GE3CT-ND
FET, MOSFET Arrays SIZ998DT-T1-GE3CT-ND
Mosfet Array 2 N-Channel (Dual), Schottky 30V 20A (Tc), 60A (Tc) 20.2W, 32.9W Surface Mount 8-PowerPair® (6x5)

Mosfet Array 2 N-Channel (Dual), Schottky 30V 20A (Tc), 60A (Tc) 20.2W, 32.9W Surface Mount 8-PowerPair® (6x5)

Buy Now Datasheet
FET, MOSFET Arrays - SIZ998DT-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIZ998DT-T1-GE3TR-ND
FET, MOSFET Arrays SIZ998DT-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual), Schottky 30V 20A (Tc), 60A (Tc) 20.2W, 32.9W Surface Mount 8-PowerPair® (6x5)

Mosfet Array 2 N-Channel (Dual), Schottky 30V 20A (Tc), 60A (Tc) 20.2W, 32.9W Surface Mount 8-PowerPair® (6x5)

Buy Now Datasheet
FET, MOSFET Arrays - SIZ998DT-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIZ998DT-T1-GE3DKR-ND
FET, MOSFET Arrays SIZ998DT-T1-GE3DKR-ND
Mosfet Array 2 N-Channel (Dual), Schottky 30V 20A (Tc), 60A (Tc) 20.2W, 32.9W Surface Mount 8-PowerPair® (6x5)

Mosfet Array 2 N-Channel (Dual), Schottky 30V 20A (Tc), 60A (Tc) 20.2W, 32.9W Surface Mount 8-PowerPair® (6x5)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIZ998DT-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIZ998DT-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIZ998DT-T1-GE3
MOSFET 2N-CH 30V 20A 8PWRPAIR

MOSFET 2N-CH 30V 20A 8PWRPAIR

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5

MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SIZ998DT-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SIZ998DT-T1-GE3
30V 2.2V@250uA 2 N-Channel - MOSFETs ROHS

30V 2.2V@250uA 2 N-Channel - MOSFETs ROHS

Supplier's Site
Mosfet, Dual N-Ch, 30V, 60A, Powerpair; Transistor Polarity Vishay - 43AC4021 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 30V, 60A, Powerpair; Transistor Polarity Vishay
43AC4021
Mosfet, Dual N-Ch, 30V, 60A, Powerpair; Transistor Polarity Vishay 43AC4021
MOSFET, DUAL N-CH, 30V, 60A, POWERPAIR; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; RoHS Compliant: Yes

MOSFET, DUAL N-CH, 30V, 60A, POWERPAIR; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 734397-SIZ998DT-T1-GE3 278-SIZ998DT-T1-GE3 SIZ998DT-T1-GE3CT-ND SIZ998DT-T1-GE3 SIZ998DT-T1-GE3 SIZ998DT-T1-GE3 43AC4021
Product Name FETs - Arrays - SIZ998DT-T1-GE3 30V 20A 60A MOSFET Transistor FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Triode/MOS Tube/Transistor >> MOSFETs Mosfet, Dual N-Ch, 30V, 60A, Powerpair; Transistor Polarity Vishay
Polarity N-Channel; 2 N-Channel (Dual), Schottky N-Channel N-Channel
V(BR)DSS 30 volts 30 volts 30 volts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 Tape and Reel 8-PowerWDFN TO-3
Packing Method Tape Reel; Reel Tape and Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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