Mosfet Array 2 N-Channel (Dual), Schottky 30V 20A (Tc), 60A (Tc) 20.2W, 32.9W Surface Mount 8-PowerPair® (6x5)
Mosfet Array 2 N-Channel (Dual), Schottky 30V 20A (Tc), 60A (Tc) 20.2W, 32.9W Surface Mount 8-PowerPair® (6x5)
Mosfet Array 2 N-Channel (Dual), Schottky 30V 20A (Tc), 60A (Tc) 20.2W, 32.9W Surface Mount 8-PowerPair® (6x5)
Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R Product overview: SIZ998DT-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20A, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20A, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIZ998DT-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 734397-SIZ998DT-T1-G
Packaging: Reel
Mounting Style: SMD
FET Feature: Standard
Transistor Polarity: 2 N-Channel (Dual), Schottky
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-PowerPair
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerWDFN
Popularity: Low
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Maximum Power: 20.2W, 32.9W
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 20A, 60A
Rds On (Maximum) at Id, Vgs: 6.7mOhm at 15A, 10V, 2.8mOhm at 19A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8.1nC at 4.5V, 19.8nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 930pF at 15V, 2620pF at 15V
MOSFET, DUAL N-CH, 30V, 60A, POWERPAIR; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; RoHS Compliant: Yes
30V 2.2V@250uA 2 N-Channel - MOSFETs ROHS
MOSFET 2N-CH 30V 20A 8PWRPAIR
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIZ998DT-T1-GE3CT-ND | 278-SIZ998DT-T1-GE3 | 734397-SIZ998DT-T1-GE3 | 43AC4021 | SIZ998DT-T1-GE3 | SIZ998DT-T1-GE3 | SIZ998DT-T1-GE3 |
| Product Name | FET, MOSFET Arrays | 30V 20A 60A MOSFET Transistor | FETs - Arrays - SIZ998DT-T1-GE3 | Mosfet, Dual N-Ch, 30V, 60A, Powerpair; Transistor Polarity Vishay | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | 8-PowerWDFN | Tape and Reel | SOT3 | TO-3 | |||
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual), Schottky | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| Transconductance | 0.0800 to 0.1650 kS |
