Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIZ900DT-T1-GE3 SIZ900DT-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 064671-SIZ900DT-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-PowerPair
Maximum Power Dissipation: 48W, 100W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 24A, 28A
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1830pF @ 15V
Maximum Rds On at Id,Vgs: 7.2 mOhm @ 19.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

MOSFET 2N-CH 30V 24A 6PWRPAIR Product overview: SIZ900DT-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 24A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SIZ900DT-T1-GE3 can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Half Bridge) 30V 24A, 28A 48W, 100W Surface Mount 6-PowerPair™