The SIZ730DT-T1-GE3 is an N-Channel MOSFET designed for applications requiring efficient power management, such as synchronous buck converters, notebooks, and servers. It features a maximum drain-source voltage (V_DS) of 30 V and can handle continuous drain currents of 16 A for Channel 1 and 35 A for Channel 2 at a junction temperature of 150 °C. The device exhibits low on-state resistance, with R_DS(on) values of 0.0093 Ω at V_GS = 10 V for Channel 1 and 0.0039 Ω for Channel 2 under similar conditions. The total gate charge (Q_g) is specified at 7.7 nC for Channel 1 and 21.2 nC for Channel 2, indicating efficient switching performance. The MOSFET is halogen-free and compliant with RoHS directives, making it suitable for environmentally conscious designs. It is packaged in a 6-PowerPAIR,Ñ¢ configuration, facilitating surface mounting. The operating temperature range is from -55 °C to 150 °C, ensuring reliability in various thermal conditions. Engineers considering this component should note its suitability for high-efficiency applications and its robust thermal characteristics, which may enhance system performance and reliability.
Mosfet Array 2 N-Channel (Half Bridge) 30V 16A, 35A 27W, 48W Surface Mount 6-PowerPair™
Manufacturer: Vishay
Win Source Part Number: 895189-SIZ730DT-T1-G
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Mosfet Array 2 N-Channel (Half Bridge) 30V 16A, 35A 27W, 48W Surface Mount 6-PowerPair™
Package: Reel - TR
Package: 6-PowerPair™
Mounting: Surface Mount
Part Status: Obsolete
Family Name: SIZ730
Categories: Discrete Semiconductor Products
Case / Package: 6-PowerPair™
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: SIZ730DT-T1-GE3TR, SIZ730DT-T1-GE3CT, SIZ730DT-T1-GE3DKR, SIZ730DTT1GE3
MOSFET 2N-CH 30V 16A 6PWRPAIR Product overview: SIZ730DT-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 16A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SIZ730DT-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 16A 6-POWERPAIR
MOSFET 2N-CH 30V 16A 6PWRPAIR
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIZ730DT-T1-GE3TR-ND | 895189-SIZ730DT-T1-GE3 | 289-SIZ730DT-T1-GE3 | SIZ730DT-T1-GE3 | SIZ730DT-T1-GE3 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIZ730DT-T1-GE3 | 30V 16A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 6-PowerPair™ | SOT3; 6-PowerPair™ | Tape & Reel (TR) | 6-PowerPair™ | |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Half Bridge) | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) |
