20V 16A N-CH MOSFET, 2.7mR Rds(on), Surface Mount Product overview: SIZ710DT-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIZ710DT-T1-GE3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Half Bridge) 20V 16A, 35A 27W, 48W Surface Mount 6-PowerPair™
Mosfet Array 2 N-Channel (Half Bridge) 20V 16A, 35A 27W, 48W Surface Mount 6-PowerPair™
Mosfet Array 2 N-Channel (Half Bridge) 20V 16A, 35A 27W, 48W Surface Mount 6-PowerPair™
Manufacturer: Vishay
Win Source Part Number: 1096548-SIZ710DT-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Family Name: SiZ710DT
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-PowerPair
Maximum Power Dissipation: 27W, 48W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 16A, 35A
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 820pF @ 10V
Maximum Rds On at Id,Vgs: 6.8 mOhm @ 19A, 10V
Introduction Date: October 04, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
MOSFET, DUAL N CHANNEL, 20V, 16A/35A, POWERPAIR; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:16A; On Resistance Rds(on):0.0055ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:16A; On Resistance Rds(on):0.0055ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET 2N-CH 20V 16A 6PWRPAIR
MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIZ710DT-T1-GE3 | SIZ710DT-T1-GE3TR-ND | 1096548-SIZ710DT-T1-GE3 | 83T3536 | 65T1676 | SIZ710DT-T1-GE3 | SIZ710DT-T1-GE3 |
| Product Name | SMD 20V 16A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIZ710DT-T1-GE3 | Mosfet, Dual N Channel, 20V, 16A/35A, Powerpair; Transistor Polarity Vishay | Mosfet, Dual N-Ch, 20V, 16A/35A, Powerpair; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| PD | 48000 milliwatts | 27000 to 48000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | 6-PowerPair™ | SOT3; 6-PowerPair | TO-3 | TO-3 | 6-PowerPairTM |
