Vishay Intertechnology, Inc. MOSFET SiZ328DT-T1-GE3

Dual N-channel 25 V MOSFETs in a PowerPAIR 3 x 3 leadless package, optimized for synchronous buck converters and CPU core power applications. Each channel has a maximum drain-source on-state resistance of 0.0150 Ω at 10 V gate bias and 0.0250 Ω at 4.5 V gate bias. Continuous drain current is rated at 25.3 A for channel-1 and 30 A for channel-2 at 25 °C, with a peak pulsed current of 40 A and 50 A respectively. The devices are 100 % Rg and UIS tested, with a junction temperature range of -55 °C to +150 °C and thermal resistance from junction-to-case of 6.3 to 8.3 °C/W. The package is lead-free and halogen-free, compliant with RoHS.